IXFL60N60

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Mfr.Part #
IXFL60N60
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 600V 60A ISOPLUS264
Stock
24,759
In Stock :
24,759

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
DS Breakdown Voltage-Min :
600 V
Drain to Source Breakdown Voltage :
600V
Number of Terminations :
3
Base Product Number :
IXFL60
Power Dissipation (Max) :
700W (Tc)
Package / Case :
ISOPLUS264™
Vgs(th) (Max) @ Id :
4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
JESD-609 Code :
e1
Continuous Drain Current (ID) :
60A
Drain to Source Voltage (Vdss) :
600V
Pin Count :
3
Packaging :
Tube
Published :
2003
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Temperature :
-55°C~150°C TJ
Drain-source On Resistance-Max :
0.08Ohm
Operating Mode :
ENHANCEMENT MODE
Mount :
Through Hole
RoHS Status :
RoHS Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Form :
THROUGH-HOLE
Series :
HiPerFET™
Number of Terminals :
3
Package Shape :
RECTANGULAR
Transistor Application :
SWITCHING
Terminal Position :
Single
Supplier Device Package :
ISOPLUS264™
Power Dissipation :
700W
Product Status :
Obsolete
Vgs (Max) :
±20V
Case Connection :
Isolated
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) :
20V
FET Feature :
--
Turn-Off Delay Time :
110 ns
Pulsed Drain Current-Max (IDM) :
240A
Package :
Tube
Qualification Status :
Not Qualified
Manufacturer :
IXYS Corporation
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rise Time :
52ns
Fall Time (Typ) :
26 ns
Number of Pins :
3
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
10000pF @ 25V
Mounting Type :
Through Hole
Number of Elements :
1
Power Dissipation-Max :
700W Tc
Additional Feature :
AVALANCHE RATED
Surface Mount :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
80m Ω @ 30A, 10V
Avalanche Energy Rating (Eas) :
4000 mJ
JESD-30 Code :
R-PSIP-T3
Reach Compliance Code :
Compliant
Datasheets
IXFL60N60
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL60N60 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:ISOPLUS264™, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, IXFL60N60 pinout, IXFL60N60 datasheet PDF, IXFL60N60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL60N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 80m Ω @ 30A, 10V ±20V 10000pF @ 25V 380nC @ 10V 600V ISOPLUS264™

IXFL60N60 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 10000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFL60N60 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 240A.
a 600V drain to source voltage (Vdss)


IXFL60N60 Applications


There are a lot of IXYS
IXFL60N60 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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