IXFL60N60
- Mfr.Part #
- IXFL60N60
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 60A ISOPLUS264
- Stock
- 24,759
- In Stock :
- 24,759
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 240A
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 26 ns
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 700W (Tc)
- Drain-source On Resistance-Max :
- 0.08Ohm
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 600V
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 60A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 700W Tc
- Package :
- Tube
- Package / Case :
- ISOPLUS264™
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXFL60
- Packaging :
- Tube
- Power Dissipation :
- 700W
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 30A, 10V
- Number of Terminals :
- 3
- Surface Mount :
- No
- Rise Time :
- 52ns
- Supplier Device Package :
- ISOPLUS264™
- Qualification Status :
- Not Qualified
- Product Status :
- Obsolete
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Package Shape :
- RECTANGULAR
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 600 V
- Turn-Off Delay Time :
- 110 ns
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- JESD-30 Code :
- R-PSIP-T3
- FET Type :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Published :
- 2003
- Manufacturer :
- IXYS Corporation
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Terminal Form :
- THROUGH-HOLE
- Mount :
- Through Hole
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Series :
- HiPerFET™
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 600V
- Datasheets
- IXFL60N60
N-Channel Tube 80m Ω @ 30A, 10V ±20V 10000pF @ 25V 380nC @ 10V 600V ISOPLUS264™
IXFL60N60 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 10000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFL60N60 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 240A.
a 600V drain to source voltage (Vdss)
IXFL60N60 Applications
There are a lot of IXYS
IXFL60N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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