IXFL60N60

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Mfr.Part #
IXFL60N60
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 600V 60A ISOPLUS264
Stock
24,759
In Stock :
24,759

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
Published :
2003
Pin Count :
3
Current - Continuous Drain (Id) @ 25°C :
60A Tc
Avalanche Energy Rating (Eas) :
4000 mJ
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
700W
Terminal Position :
Single
JESD-30 Code :
R-PSIP-T3
Drain to Source Voltage (Vdss) :
600V
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
FET Feature :
--
Fall Time (Typ) :
26 ns
Power Dissipation-Max :
700W Tc
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
240A
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
RoHS Status :
RoHS Compliant
Surface Mount :
No
Element Configuration :
Single
Rds On (Max) @ Id, Vgs :
80m Ω @ 30A, 10V
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tube
Drain to Source Breakdown Voltage :
600V
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Through Hole
Manufacturer :
IXYS Corporation
Series :
HiPerFET™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
52ns
Product Status :
Obsolete
JESD-609 Code :
e1
Drain-source On Resistance-Max :
0.08Ohm
Vgs(th) (Max) @ Id :
4V @ 8mA
Number of Pins :
3
Package Shape :
RECTANGULAR
Case Connection :
Isolated
Turn-Off Delay Time :
110 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
10000pF @ 25V
DS Breakdown Voltage-Min :
600 V
Power Dissipation (Max) :
700W (Tc)
Terminal Form :
THROUGH-HOLE
Base Product Number :
IXFL60
Number of Terminals :
3
Package :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Pbfree Code :
yes
Supplier Device Package :
ISOPLUS264™
Continuous Drain Current (ID) :
60A
Package / Case :
ISOPLUS264™
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Datasheets
IXFL60N60
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL60N60 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Package / Case:ISOPLUS264™, IXFL60N60 pinout, IXFL60N60 datasheet PDF, IXFL60N60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL60N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 80m Ω @ 30A, 10V ±20V 10000pF @ 25V 380nC @ 10V 600V ISOPLUS264™

IXFL60N60 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 10000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFL60N60 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 240A.
a 600V drain to source voltage (Vdss)


IXFL60N60 Applications


There are a lot of IXYS
IXFL60N60 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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