IXFL60N60
- Mfr.Part #
- IXFL60N60
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 60A ISOPLUS264
- Stock
- 24,759
- In Stock :
- 24,759
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- Isolated
- Power Dissipation (Max) :
- 700W (Tc)
- Number of Elements :
- 1
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- ISOPLUS264™
- Manufacturer :
- IXYS Corporation
- Base Product Number :
- IXFL60
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 25V
- Rise Time :
- 52ns
- Power Dissipation :
- 700W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Published :
- 2003
- Turn-Off Delay Time :
- 110 ns
- Drain to Source Voltage (Vdss) :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 700W Tc
- Pulsed Drain Current-Max (IDM) :
- 240A
- Fall Time (Typ) :
- 26 ns
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Reach Compliance Code :
- Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 30A, 10V
- Surface Mount :
- No
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 600V
- JESD-30 Code :
- R-PSIP-T3
- DS Breakdown Voltage-Min :
- 600 V
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Series :
- HiPerFET™
- Package Shape :
- RECTANGULAR
- Terminal Form :
- THROUGH-HOLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Terminal Position :
- Single
- Number of Terminals :
- 3
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- ISOPLUS264™
- Polarity/Channel Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Drain-source On Resistance-Max :
- 0.08Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Product Status :
- Obsolete
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 60A
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IXFL60N60
N-Channel Tube 80m Ω @ 30A, 10V ±20V 10000pF @ 25V 380nC @ 10V 600V ISOPLUS264™
IXFL60N60 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 10000pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 60A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 240A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFL60N60 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 240A.
a 600V drain to source voltage (Vdss)
IXFL60N60 Applications
There are a lot of IXYS
IXFL60N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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