IXFL60N60

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Rise Time :

52ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

2003

Base Product Number :

IXFL60

Drain-source On Resistance-Max :

0.08Ohm

Series :

HiPerFET™

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

110 ns

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 25V

Package / Case :

ISOPLUS264™

FET Feature :

--

Power Dissipation :

700W

Supplier Device Package :

ISOPLUS264™

Number of Elements :

1

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

600V

DS Breakdown Voltage-Min :

600 V

Continuous Drain Current (ID) :

60A

Packaging :

Tube

Case Connection :

Isolated

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

80m Ω @ 30A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

26 ns

Vgs(th) (Max) @ Id :

4V @ 8mA

Reach Compliance Code :

Compliant

Pin Count :

3

RoHS Status :

RoHS Compliant

Number of Terminals :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Terminal Position :

Single

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSIP-T3

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

4000 mJ

Power Dissipation (Max) :

700W (Tc)

Power Dissipation-Max :

700W Tc

Operating Temperature :

-55°C~150°C TJ

Product Status :

Obsolete

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

240A

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Drain to Source Voltage (Vdss) :

600V

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS Corporation

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Package :

Tube

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

THROUGH-HOLE

FET Type :

N-Channel