IXFL34N100

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Mfr.Part #
IXFL34N100
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 1000V 30A ISOPLUS264
Stock
17,855
In Stock :
17,855

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Number of Terminations :
3
Mount :
Through Hole
Turn-Off Delay Time :
110 ns
Qualification Status :
Not Qualified
RoHS :
Details
Transistor Type :
1 N-Channel
Surface Mount :
No
Published :
2002
Package / Case :
ISOPLUS264™
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
Single
Avalanche Energy Rating (Eas) :
4000 mJ
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
9200pF @ 25V
Max Power Dissipation :
550 W
Continuous Drain Current (ID) :
30A
DS Breakdown Voltage-Min :
1000 V
JESD-609 Code :
e1
Element Configuration :
Single
Channel Mode :
Enhancement
Height :
26.42 mm
Width :
5.21 mm
Input Capacitance :
9.2 nF
Drain to Source Breakdown Voltage :
1kV
Mounting Type :
Through Hole
Package Shape :
RECTANGULAR
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
ISOPLUS264™
Series :
HiPerFET™
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max :
550W Tc
RoHS Status :
RoHS Compliant
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Reach Compliance Code :
Compliant
Drain-source On Resistance-Max :
0.28 Ω
Package :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Feature :
--
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Resistance :
300 mΩ
Maximum Operating Temperature :
+ 150 C
FET Type :
N-Channel
JESD-30 Code :
R-PSIP-T3
Length :
20.29 mm
Rds On (Max) @ Id, Vgs :
280m Ω @ 30A, 10V
Number of Channels :
1 Channel
Rise Time :
65ns
Transistor Polarity :
N-Channel
Brand :
IXYS
Vgs (Max) :
±20V
Fall Time (Typ) :
30 ns
Mounting Style :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Product Type :
MOSFET
Base Product Number :
IXFL34
Tradename :
HyperFET
Operating Temperature :
-55°C~150°C TJ
Resistance :
280mOhm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
Isolated
Minimum Operating Temperature :
- 55 C
Lead Free :
Lead Free
Terminal Form :
THROUGH-HOLE
Min Operating Temperature :
-55 °C
Power Dissipation :
550W
Pulsed Drain Current-Max (IDM) :
136 A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
MOSFET
Packaging :
Tube
Vgs(th) (Max) @ Id :
5V @ 8mA
Pin Count :
3
Drain Current-Max (Abs) (ID) :
30 A
Rds On Max :
280 mΩ
Power Dissipation-Max (Abs) :
550 W
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Product Status :
Not For New Designs
Number of Pins :
3
Number of Terminals :
3
Max Operating Temperature :
150 °C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Power Dissipation (Max) :
550W (Tc)
Polarity/Channel Type :
N-Channel
Datasheets
IXFL34N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL34N100 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:ISOPLUS264™, Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFL34N100 pinout, IXFL34N100 datasheet PDF, IXFL34N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL34N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 280m Ω @ 30A, 10V ±20V 9200pF @ 25V 380nC @ 10V 1000V ISOPLUS264™

IXFL34N100 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 4000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 30 A.As a result of its turn-off delay time, which is 110 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 136 A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 300 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFL34N100 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 136 A.
single MOSFETs transistor is 300 mΩ
a 1000V drain to source voltage (Vdss)


IXFL34N100 Applications


There are a lot of IXYS
IXFL34N100 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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