IXFL34N100

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXFL34

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

550 W

Power Dissipation-Max :

550W Tc

FET Feature :

--

Max Power Dissipation :

550 W

Published :

2002

Min Operating Temperature :

-55 °C

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSIP-T3

Channel Mode :

Enhancement

Number of Pins :

3

Tradename :

HyperFET

Pulsed Drain Current-Max (IDM) :

136 A

Avalanche Energy Rating (Eas) :

4000 mJ

Package Shape :

RECTANGULAR

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Supplier Device Package :

ISOPLUS264™

Number of Channels :

1 Channel

Element Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Width :

5.21 mm

Number of Terminations :

3

Vgs (Max) :

±20V

Mounting Style :

Through Hole

Transistor Type :

1 N-Channel

Input Capacitance :

9.2 nF

Fall Time (Typ) :

30 ns

Series :

HiPerFET™

Max Operating Temperature :

150 °C

Resistance :

280mOhm

Turn-Off Delay Time :

110 ns

Terminal Form :

THROUGH-HOLE

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V

Package :

Tube

Packaging :

Tube

Pin Count :

3

Drain Current-Max (Abs) (ID) :

30 A

Drain to Source Breakdown Voltage :

1kV

Vgs(th) (Max) @ Id :

5V @ 8mA

Product Status :

Not For New Designs

Minimum Operating Temperature :

- 55 C

Number of Terminals :

3

Continuous Drain Current (ID) :

30A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Package / Case :

ISOPLUS264™

Drain to Source Resistance :

300 mΩ

Mounting Type :

Through Hole

RoHS :

Details

Height :

26.42 mm

Rds On Max :

280 mΩ

DS Breakdown Voltage-Min :

1000 V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Surface Mount :

No

Brand :

IXYS

Drain to Source Voltage (Vdss) :

1000V

Product Category :

MOSFET

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.28 Ω

Transistor Polarity :

N-Channel

Power Dissipation :

550W

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Mount :

Through Hole

FET Type :

N-Channel

Terminal Position :

Single

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Rise Time :

65ns

Reach Compliance Code :

Compliant

JESD-609 Code :

e1

Pbfree Code :

yes

Product Type :

MOSFET

Power Dissipation (Max) :

550W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

9200pF @ 25V

Additional Feature :

AVALANCHE RATED

Length :

20.29 mm

Operating Temperature :

-55°C~150°C TJ

Maximum Operating Temperature :

+ 150 C

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

280m Ω @ 30A, 10V