IXFL34N100
- Mfr.Part #
- IXFL34N100
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 30A ISOPLUS264
- Stock
- 17,855
- In Stock :
- 17,855
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 110 ns
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Transistor Type :
- 1 N-Channel
- Surface Mount :
- No
- Published :
- 2002
- Package / Case :
- ISOPLUS264™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 9200pF @ 25V
- Max Power Dissipation :
- 550 W
- Continuous Drain Current (ID) :
- 30A
- DS Breakdown Voltage-Min :
- 1000 V
- JESD-609 Code :
- e1
- Element Configuration :
- Single
- Channel Mode :
- Enhancement
- Height :
- 26.42 mm
- Width :
- 5.21 mm
- Input Capacitance :
- 9.2 nF
- Drain to Source Breakdown Voltage :
- 1kV
- Mounting Type :
- Through Hole
- Package Shape :
- RECTANGULAR
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- ISOPLUS264™
- Series :
- HiPerFET™
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 550W Tc
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 1000V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Reach Compliance Code :
- Compliant
- Drain-source On Resistance-Max :
- 0.28 Ω
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drain to Source Resistance :
- 300 mΩ
- Maximum Operating Temperature :
- + 150 C
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSIP-T3
- Length :
- 20.29 mm
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 30A, 10V
- Number of Channels :
- 1 Channel
- Rise Time :
- 65ns
- Transistor Polarity :
- N-Channel
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 30 ns
- Mounting Style :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Product Type :
- MOSFET
- Base Product Number :
- IXFL34
- Tradename :
- HyperFET
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 280mOhm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- Isolated
- Minimum Operating Temperature :
- - 55 C
- Lead Free :
- Lead Free
- Terminal Form :
- THROUGH-HOLE
- Min Operating Temperature :
- -55 °C
- Power Dissipation :
- 550W
- Pulsed Drain Current-Max (IDM) :
- 136 A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Pin Count :
- 3
- Drain Current-Max (Abs) (ID) :
- 30 A
- Rds On Max :
- 280 mΩ
- Power Dissipation-Max (Abs) :
- 550 W
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Product Status :
- Not For New Designs
- Number of Pins :
- 3
- Number of Terminals :
- 3
- Max Operating Temperature :
- 150 °C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 550W (Tc)
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXFL34N100
N-Channel Tube 280m Ω @ 30A, 10V ±20V 9200pF @ 25V 380nC @ 10V 1000V ISOPLUS264™
IXFL34N100 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 4000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9200pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 1kV drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 1kV.There is no drain current on this device since the maximum continuous current it can conduct is 30 A.As a result of its turn-off delay time, which is 110 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 136 A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 300 mΩ.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 1000 V, it should remain above the 1000 V level.The transistor must receive a 1000V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFL34N100 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 136 A.
single MOSFETs transistor is 300 mΩ
a 1000V drain to source voltage (Vdss)
IXFL34N100 Applications
There are a lot of IXYS
IXFL34N100 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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