IXFL39N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.22Ohm

Package Shape :

RECTANGULAR

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXFL39

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

13400pF @ 25V

Width :

5.21mm

Power Dissipation-Max :

580W Tc

Number of Pins :

264

Number of Terminations :

3

Number of Elements :

1

JESD-609 Code :

e1

DS Breakdown Voltage-Min :

900 V

Gate to Source Voltage (Vgs) :

20V

Series :

HiPerFET™

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

--

Fall Time (Typ) :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

154A

Power Dissipation :

580W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Manufacturer :

IXYS Corporation

Number of Terminals :

3

Vgs (Max) :

±20V

Mount :

Through Hole

Continuous Drain Current (ID) :

34A

Package / Case :

ISOPLUS264™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

900V

Drain to Source Breakdown Voltage :

900V

Terminal Position :

Single

Pbfree Code :

yes

Power Dissipation (Max) :

580W (Tc)

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Rise Time :

68ns

Case Connection :

Isolated

Length :

20.29mm

JESD-30 Code :

R-PSIP-T3

Height :

26.42mm

Qualification Status :

Not Qualified

Turn-Off Delay Time :

125 ns

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Published :

2003

Turn On Delay Time :

45 ns

Gate Charge (Qg) (Max) @ Vgs :

375nC @ 10V

Mounting Type :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package :

Tube

Supplier Device Package :

ISOPLUS264™

Avalanche Energy Rating (Eas) :

4000 mJ

Rds On (Max) @ Id, Vgs :

220m Ω @ 19.5A, 10V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 8mA

Configuration :

SINGLE WITH BUILT-IN DIODE