IXFL39N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

580W Tc

Rds On (Max) @ Id, Vgs :

220m Ω @ 19.5A, 10V

Published :

2003

Additional Feature :

AVALANCHE RATED

Number of Pins :

264

Power Dissipation (Max) :

580W (Tc)

Mount :

Through Hole

JESD-609 Code :

e1

Fall Time (Typ) :

30 ns

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

4000 mJ

Drain to Source Breakdown Voltage :

900V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

375nC @ 10V

Pulsed Drain Current-Max (IDM) :

154A

Package :

Tube

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

900V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Product Status :

Active

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

THROUGH-HOLE

JESD-30 Code :

R-PSIP-T3

Turn-Off Delay Time :

125 ns

Pbfree Code :

yes

Manufacturer :

IXYS Corporation

Height :

26.42mm

Vgs(th) (Max) @ Id :

5V @ 8mA

Number of Terminals :

3

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Width :

5.21mm

Power Dissipation :

580W

Continuous Drain Current (ID) :

34A

Length :

20.29mm

Number of Terminations :

3

Terminal Position :

Single

Pin Count :

3

FET Type :

N-Channel

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

FET Feature :

--

Input Capacitance (Ciss) (Max) @ Vds :

13400pF @ 25V

Drain-source On Resistance-Max :

0.22Ohm

Transistor Element Material :

SILICON

Rise Time :

68ns

Element Configuration :

Single

Package / Case :

ISOPLUS264™

Vgs (Max) :

±20V

Case Connection :

Isolated

Qualification Status :

Not Qualified

Packaging :

Tube

Package Shape :

RECTANGULAR

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Compliant

Series :

HiPerFET™

Number of Elements :

1

Surface Mount :

No

DS Breakdown Voltage-Min :

900 V

Base Product Number :

IXFL39

Supplier Device Package :

ISOPLUS264™

Turn On Delay Time :

45 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR