IXFL39N90

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.22Ohm

Pulsed Drain Current-Max (IDM) :

154A

Input Capacitance (Ciss) (Max) @ Vds :

13400pF @ 25V

Package / Case :

ISOPLUS264™

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

900V

JESD-609 Code :

e1

Continuous Drain Current (ID) :

34A

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

4000 mJ

Qualification Status :

Not Qualified

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Series :

HiPerFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

Power Dissipation-Max :

580W Tc

Turn-Off Delay Time :

125 ns

Rds On (Max) @ Id, Vgs :

220m Ω @ 19.5A, 10V

Number of Pins :

264

Turn On Delay Time :

45 ns

Transistor Application :

SWITCHING

Power Dissipation :

580W

Mount :

Through Hole

Pbfree Code :

yes

Length :

20.29mm

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS Corporation

Fall Time (Typ) :

30 ns

Terminal Position :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Rise Time :

68ns

FET Type :

N-Channel

Supplier Device Package :

ISOPLUS264™

Power Dissipation (Max) :

580W (Tc)

FET Feature :

--

Package :

Tube

Vgs (Max) :

±20V

Height :

26.42mm

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Package Shape :

RECTANGULAR

Product Status :

Active

Base Product Number :

IXFL39

Width :

5.21mm

DS Breakdown Voltage-Min :

900 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PSIP-T3

Additional Feature :

AVALANCHE RATED

Pin Count :

3

Number of Terminals :

3

Vgs(th) (Max) @ Id :

5V @ 8mA

Drain to Source Breakdown Voltage :

900V

Number of Elements :

1

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

375nC @ 10V

Transistor Element Material :

SILICON