IXFL39N90

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Mfr.Part #
IXFL39N90
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 900V 34A ISOPLUS264
Stock
39,844
In Stock :
39,844

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Terminal Form :
THROUGH-HOLE
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
580W Tc
Number of Terminals :
3
Continuous Drain Current (ID) :
34A
Mounting Type :
Through Hole
Package / Case :
ISOPLUS264™
Surface Mount :
No
Gate Charge (Qg) (Max) @ Vgs :
375nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
264
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS Corporation
Transistor Element Material :
SILICON
Additional Feature :
AVALANCHE RATED
Transistor Application :
SWITCHING
Height :
26.42mm
FET Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Drain to Source Breakdown Voltage :
900V
Base Product Number :
IXFL39
Length :
20.29mm
Number of Terminations :
3
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Rise Time :
68ns
Terminal Position :
Single
Supplier Device Package :
ISOPLUS264™
DS Breakdown Voltage-Min :
900 V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Avalanche Energy Rating (Eas) :
4000 mJ
Vgs(th) (Max) @ Id :
5V @ 8mA
Drain to Source Voltage (Vdss) :
900V
Power Dissipation :
580W
Reach Compliance Code :
Compliant
Series :
HiPerFET™
Element Configuration :
Single
Turn-Off Delay Time :
125 ns
Vgs (Max) :
±20V
Published :
2003
Width :
5.21mm
Fall Time (Typ) :
30 ns
Pin Count :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Feature :
--
Input Capacitance (Ciss) (Max) @ Vds :
13400pF @ 25V
Power Dissipation (Max) :
580W (Tc)
Package :
Tube
JESD-609 Code :
e1
Rds On (Max) @ Id, Vgs :
220m Ω @ 19.5A, 10V
JESD-30 Code :
R-PSIP-T3
Gate to Source Voltage (Vgs) :
20V
Mount :
Through Hole
Drain-source On Resistance-Max :
0.22Ohm
Pulsed Drain Current-Max (IDM) :
154A
Case Connection :
Isolated
Turn On Delay Time :
45 ns
Operating Mode :
ENHANCEMENT MODE
Product Status :
Active
Package Shape :
RECTANGULAR
Datasheets
IXFL39N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL39N90 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:ISOPLUS264™, Number of Pins:264, Number of Terminations:3, IXFL39N90 pinout, IXFL39N90 datasheet PDF, IXFL39N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL39N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 220m Ω @ 19.5A, 10V ±20V 13400pF @ 25V 375nC @ 10V 900V ISOPLUS264™

IXFL39N90 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 13400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 34A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 900V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 125 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 154A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 45 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 900 V.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFL39N90 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154A.
a 900V drain to source voltage (Vdss)


IXFL39N90 Applications


There are a lot of IXYS
IXFL39N90 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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