IXFL39N90

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Mfr.Part #
IXFL39N90
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 900V 34A ISOPLUS264
Stock
39,844
In Stock :
39,844

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
34A
DS Breakdown Voltage-Min :
900 V
Drain-source On Resistance-Max :
0.22Ohm
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
13400pF @ 25V
Power Dissipation-Max :
580W Tc
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
4000 mJ
Rds On (Max) @ Id, Vgs :
220m Ω @ 19.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
375nC @ 10V
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Rise Time :
68ns
Package :
Tube
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Mounting Type :
Through Hole
Pulsed Drain Current-Max (IDM) :
154A
Drain to Source Voltage (Vdss) :
900V
Published :
2003
Number of Terminals :
3
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Turn-Off Delay Time :
125 ns
JESD-609 Code :
e1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
3
Number of Pins :
264
Case Connection :
Isolated
JESD-30 Code :
R-PSIP-T3
Base Product Number :
IXFL39
Drain to Source Breakdown Voltage :
900V
Additional Feature :
AVALANCHE RATED
Transistor Element Material :
SILICON
Fall Time (Typ) :
30 ns
Length :
20.29mm
Terminal Form :
THROUGH-HOLE
FET Feature :
--
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package / Case :
ISOPLUS264™
FET Type :
N-Channel
Supplier Device Package :
ISOPLUS264™
Element Configuration :
Single
Height :
26.42mm
Power Dissipation (Max) :
580W (Tc)
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
45 ns
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Package Shape :
RECTANGULAR
Vgs(th) (Max) @ Id :
5V @ 8mA
Width :
5.21mm
Power Dissipation :
580W
Qualification Status :
Not Qualified
Manufacturer :
IXYS Corporation
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±20V
Series :
HiPerFET™
Polarity/Channel Type :
N-Channel
Product Status :
Active
Surface Mount :
No
Mount :
Through Hole
Terminal Position :
Single
Datasheets
IXFL39N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL39N90 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:264, Package / Case:ISOPLUS264™, Operating Temperature:-55°C~150°C TJ, IXFL39N90 pinout, IXFL39N90 datasheet PDF, IXFL39N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL39N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 220m Ω @ 19.5A, 10V ±20V 13400pF @ 25V 375nC @ 10V 900V ISOPLUS264™

IXFL39N90 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 13400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 34A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 900V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 125 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 154A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 45 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 900 V.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFL39N90 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154A.
a 900V drain to source voltage (Vdss)


IXFL39N90 Applications


There are a lot of IXYS
IXFL39N90 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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