IXFL39N90

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Mfr.Part #
IXFL39N90
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 900V 34A ISOPLUS264
Stock
39,844
In Stock :
39,844

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance (Ciss) (Max) @ Vds :
13400pF @ 25V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
Isolated
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Length :
20.29mm
Power Dissipation :
580W
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Power Dissipation-Max :
580W Tc
Drain-source On Resistance-Max :
0.22Ohm
Turn-Off Delay Time :
125 ns
Terminal Position :
Single
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Number of Pins :
264
Drain to Source Breakdown Voltage :
900V
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
220m Ω @ 19.5A, 10V
Drain to Source Voltage (Vdss) :
900V
Number of Terminations :
3
Package Shape :
RECTANGULAR
Power Dissipation (Max) :
580W (Tc)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pin Count :
3
Width :
5.21mm
Gate Charge (Qg) (Max) @ Vgs :
375nC @ 10V
Package / Case :
ISOPLUS264™
Number of Terminals :
3
Pbfree Code :
yes
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
4000 mJ
Element Configuration :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PSIP-T3
Base Product Number :
IXFL39
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Product Status :
Active
Vgs (Max) :
±20V
Packaging :
Tube
Supplier Device Package :
ISOPLUS264™
Current - Continuous Drain (Id) @ 25°C :
34A Tc
JESD-609 Code :
e1
Pulsed Drain Current-Max (IDM) :
154A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
5V @ 8mA
Manufacturer :
IXYS Corporation
Published :
2003
Rise Time :
68ns
DS Breakdown Voltage-Min :
900 V
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Package :
Tube
FET Feature :
--
Turn On Delay Time :
45 ns
Continuous Drain Current (ID) :
34A
Terminal Form :
THROUGH-HOLE
Height :
26.42mm
Fall Time (Typ) :
30 ns
Transistor Application :
SWITCHING
Series :
HiPerFET™
Datasheets
IXFL39N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL39N90 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:264, Number of Terminations:3, Package / Case:ISOPLUS264™, Mounting Type:Through Hole, IXFL39N90 pinout, IXFL39N90 datasheet PDF, IXFL39N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL39N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 220m Ω @ 19.5A, 10V ±20V 13400pF @ 25V 375nC @ 10V 900V ISOPLUS264™

IXFL39N90 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 13400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 34A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 900V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 125 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 154A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 45 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 900 V.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFL39N90 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154A.
a 900V drain to source voltage (Vdss)


IXFL39N90 Applications


There are a lot of IXYS
IXFL39N90 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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