IXFL39N90

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Mfr.Part #
IXFL39N90
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 900V 34A ISOPLUS264
Stock
39,844
In Stock :
39,844

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
4000 mJ
Number of Terminations :
3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
45 ns
JESD-609 Code :
e1
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Through Hole
Drain to Source Breakdown Voltage :
900V
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Turn-Off Delay Time :
125 ns
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Package / Case :
ISOPLUS264™
Additional Feature :
AVALANCHE RATED
Product Status :
Active
Number of Pins :
264
Base Product Number :
IXFL39
Supplier Device Package :
ISOPLUS264™
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
900 V
Length :
20.29mm
Rise Time :
68ns
Terminal Position :
Single
Transistor Application :
SWITCHING
Vgs (Max) :
±20V
Fall Time (Typ) :
30 ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
Isolated
Number of Terminals :
3
Vgs(th) (Max) @ Id :
5V @ 8mA
Width :
5.21mm
Surface Mount :
No
JESD-30 Code :
R-PSIP-T3
Package :
Tube
Gate to Source Voltage (Vgs) :
20V
Input Capacitance (Ciss) (Max) @ Vds :
13400pF @ 25V
Series :
HiPerFET™
Qualification Status :
Not Qualified
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
580W Tc
Packaging :
Tube
Continuous Drain Current (ID) :
34A
Mount :
Through Hole
Height :
26.42mm
Pulsed Drain Current-Max (IDM) :
154A
Drain to Source Voltage (Vdss) :
900V
Gate Charge (Qg) (Max) @ Vgs :
375nC @ 10V
Pin Count :
3
Terminal Form :
THROUGH-HOLE
Rds On (Max) @ Id, Vgs :
220m Ω @ 19.5A, 10V
Power Dissipation (Max) :
580W (Tc)
Number of Elements :
1
Drain-source On Resistance-Max :
0.22Ohm
FET Type :
N-Channel
Element Configuration :
Single
Manufacturer :
IXYS Corporation
Pbfree Code :
yes
Power Dissipation :
580W
Published :
2003
Datasheets
IXFL39N90
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL39N90 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:ISOPLUS264™, Number of Pins:264, Operating Temperature:-55°C~150°C TJ, IXFL39N90 pinout, IXFL39N90 datasheet PDF, IXFL39N90 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL39N90 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 220m Ω @ 19.5A, 10V ±20V 13400pF @ 25V 375nC @ 10V 900V ISOPLUS264™

IXFL39N90 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 13400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 34A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 900V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 125 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 154A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 45 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 900 V.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFL39N90 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154A.
a 900V drain to source voltage (Vdss)


IXFL39N90 Applications


There are a lot of IXYS
IXFL39N90 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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