IXFL39N90
- Mfr.Part #
- IXFL39N90
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 34A ISOPLUS264
- Stock
- 39,844
- In Stock :
- 39,844
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- Number of Pins :
- 264
- FET Feature :
- --
- Terminal Position :
- Single
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation (Max) :
- 580W (Tc)
- Series :
- HiPerFET™
- Height :
- 26.42mm
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Fall Time (Typ) :
- 30 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 13400pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 19.5A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 34A
- Drain to Source Breakdown Voltage :
- 900V
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- ISOPLUS264™
- Base Product Number :
- IXFL39
- Width :
- 5.21mm
- JESD-30 Code :
- R-PSIP-T3
- Gate to Source Voltage (Vgs) :
- 20V
- Product Status :
- Active
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS Corporation
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn-Off Delay Time :
- 125 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 375nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 154A
- Power Dissipation :
- 580W
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Rise Time :
- 68ns
- Element Configuration :
- Single
- Published :
- 2003
- Terminal Form :
- THROUGH-HOLE
- Surface Mount :
- No
- Packaging :
- Tube
- Number of Terminals :
- 3
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 900V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 900 V
- Turn On Delay Time :
- 45 ns
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 580W Tc
- Length :
- 20.29mm
- Number of Elements :
- 1
- Package :
- Tube
- Package / Case :
- ISOPLUS264™
- Qualification Status :
- Not Qualified
- Case Connection :
- Isolated
- Avalanche Energy Rating (Eas) :
- 4000 mJ
- Reach Compliance Code :
- Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.22Ohm
- Datasheets
- IXFL39N90
N-Channel Tube 220m Ω @ 19.5A, 10V ±20V 13400pF @ 25V 375nC @ 10V 900V ISOPLUS264™
IXFL39N90 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 4000 mJ.A device's maximal input capacitance is 13400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 34A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 900V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 125 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 154A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 45 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 900 V.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFL39N90 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 900V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 154A.
a 900V drain to source voltage (Vdss)
IXFL39N90 Applications
There are a lot of IXYS
IXFL39N90 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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