IXFL40N110P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

20.29 mm

Gate Charge (Qg) (Max) @ Vgs :

310nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Power Dissipation-Max (Abs) :

357 W

Power Dissipation :

357W

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Channel Mode :

Enhancement

Published :

2008

Number of Channels :

1 Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Fall Time (Typ) :

54 ns

Min Operating Temperature :

-55°C

Series :

HiPerFET™, PolarP2™

Transistor Type :

1 N-Channel

Number of Pins :

3

Surface Mount :

No

Configuration :

Single

Mount :

Through Hole

Mounting Style :

Through Hole

Drain to Source Voltage (Vdss) :

1100V

Brand :

IXYS

Height :

26.42 mm

Rds On (Max) @ Id, Vgs :

280m Ω @ 20A, 10V

Rise Time :

55ns

FET Type :

N-Channel

Product Status :

Active

Product Category :

MOSFET

Transistor Polarity :

N-Channel

FET Feature :

--

Package / Case :

ISOPLUS264™

Package :

Tube

Turn-Off Delay Time :

110 ns

Drain Current-Max (Abs) (ID) :

21 A

Product Type :

MOSFET

Minimum Operating Temperature :

- 55 C

Continuous Drain Current (ID) :

21A

Max Operating Temperature :

150°C

Base Product Number :

IXFL40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Tradename :

HiPerFET

Operating Temperature :

--

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Polarity/Channel Type :

N-Channel

Reach Compliance Code :

Compliant

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

1.1kV

Supplier Device Package :

ISOPLUS264™

RoHS :

Details

Power Dissipation (Max) :

--

Vgs (Max) :

±30V

Manufacturer :

IXYS

Element Configuration :

Single

Max Power Dissipation :

357W

Packaging :

Tube

Width :

5.21 mm

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Factory Lead Time :

26 Weeks