IXFL100N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

5000 mJ

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

625W

RoHS :

Compliant

Channel Type :

N

JESD-609 Code :

e1

Continuous Drain Current (ID) :

70A

Maximum Operating Temperature :

+150 °C

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Transistor Type :

1 N-Channel

Qualification Status :

Not Qualified

Terminal Position :

Single

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

500V

Terminal Form :

THROUGH-HOLE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

500V

Pulsed Drain Current-Max (IDM) :

250A

Package Type :

ISOPLUS264

Base Product Number :

IXFL100

Threshold Voltage :

5V

Package / Case :

ISOPLUS264™

Vgs (Max) :

±30V

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Number of Channels :

1 Channel

Published :

2006

Tradename :

HiPerFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

29ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Power Dissipation-Max :

625W Tc

FET Type :

N-Channel

Number of Terminations :

3

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 8mA

Brand :

IXYS

Fall Time (Typ) :

26 ns

Surface Mount :

No

Type :

PolarHV HiPerFET Power MOSFET ISOPLUS264

Mount :

Through Hole

Input Capacitance :

20 nF

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

26.42mm

Gate to Source Voltage (Vgs) :

30V

Package :

Tube

Max Operating Temperature :

150 °C

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Max Power Dissipation :

625 W

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

Factory Lead Time :

26 Weeks

JESD-30 Code :

R-PSIP-T3

Rds On Max :

52 mΩ

Configuration :

Single

Subcategory :

MOSFETs

Length :

20.29mm

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Minimum Operating Temperature :

-55 °C

Element Configuration :

Single

Transistor Element Material :

SILICON

FET Feature :

--

Series :

HiPerFET™, PolarHT™

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.052Ohm

Package Shape :

RECTANGULAR

Number of Elements per Chip :

1

Mounting Style :

Through Hole

Manufacturer :

IXYS

Turn-Off Delay Time :

110 ns

Case Connection :

Isolated

Min Operating Temperature :

-55 °C

Power Dissipation (Max) :

625W (Tc)

Width :

5.21mm

Number of Terminals :

3

DS Breakdown Voltage-Min :

500 V

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Rds On (Max) @ Id, Vgs :

52m Ω @ 50A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 25V

Isolation Voltage :

2.5kV

Pbfree Code :

yes

Drain to Source Resistance :

52 mΩ

ECCN Code :

EAR99

Transistor Polarity :

N-Channel

Supplier Device Package :

ISOPLUS264™

REACH SVHC :

No SVHC