IXFL100N50P
- Mfr.Part #
- IXFL100N50P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 70A ISOPLUS264
- Stock
- 9
- In Stock :
- 9
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 20.29mm
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Mount :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Number of Terminals :
- 3
- Power Dissipation (Max) :
- 625W (Tc)
- FET Feature :
- --
- Min Operating Temperature :
- -55 °C
- Surface Mount :
- No
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Pulsed Drain Current-Max (IDM) :
- 250A
- Package :
- Tube
- Rds On (Max) @ Id, Vgs :
- 52m Ω @ 50A, 10V
- Mounting Style :
- Through Hole
- Width :
- 5.21mm
- Tradename :
- HiPerFET
- Operating Temperature :
- -55°C~150°C TJ
- Type :
- PolarHV HiPerFET Power MOSFET ISOPLUS264
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 500V
- Maximum Operating Temperature :
- +150 °C
- DS Breakdown Voltage-Min :
- 500 V
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On Max :
- 52 mΩ
- REACH SVHC :
- No SVHC
- Height :
- 26.42mm
- RoHS :
- Compliant
- Package Type :
- ISOPLUS264
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 625W
- Manufacturer :
- IXYS
- Published :
- 2006
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- -55 °C
- Mounting Type :
- Through Hole
- Input Capacitance :
- 20 nF
- Drain to Source Voltage (Vdss) :
- 500V
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Compliant
- Vgs (Max) :
- ±30V
- Brand :
- IXYS
- Channel Mode :
- Enhancement
- Number of Pins :
- 3
- Package / Case :
- ISOPLUS264™
- Configuration :
- Single
- Max Power Dissipation :
- 625 W
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Channels :
- 1 Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Supplier Device Package :
- ISOPLUS264™
- Product Type :
- MOSFET
- Drain-source On Resistance-Max :
- 0.052Ohm
- Packaging :
- Tube
- Product Status :
- Active
- Threshold Voltage :
- 5V
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Channel Type :
- N
- Subcategory :
- MOSFETs
- Rise Time :
- 29ns
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Isolation Voltage :
- 2.5kV
- Number of Elements :
- 1
- Product Category :
- MOSFET
- Number of Elements per Chip :
- 1
- Power Dissipation-Max :
- 625W Tc
- Continuous Drain Current (ID) :
- 70A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFL100
- JESD-30 Code :
- R-PSIP-T3
- Pbfree Code :
- yes
- Drain to Source Resistance :
- 52 mΩ
- Terminal Position :
- Single
- Fall Time (Typ) :
- 26 ns
- Turn-Off Delay Time :
- 110 ns
- Max Operating Temperature :
- 150 °C
- Factory Lead Time :
- 26 Weeks
- Terminal Form :
- THROUGH-HOLE
- Series :
- HiPerFET™, PolarHT™
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 20000pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- Isolated
- Datasheets
- IXFL100N50P
N-Channel Tube 52m Ω @ 50A, 10V ±30V 20000pF @ 25V 240nC @ 10V 500V ISOPLUS264™
IXFL100N50P Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 20000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 70A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 110 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 250A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 52 mΩ. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFL100N50P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 250A.
single MOSFETs transistor is 52 mΩ
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IXFL100N50P Applications
There are a lot of IXYS
IXFL100N50P applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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