IXFL44N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

357W (Tc)

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

1000V

Number of Terminations :

3

Length :

20.29 mm

Max Power Dissipation :

357 W

Channel Mode :

Enhancement

Terminal Form :

THROUGH-HOLE

Tradename :

HiPerFET

Package Shape :

RECTANGULAR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

3

Mounting Style :

Through Hole

Product Category :

MOSFET

Package / Case :

ISOPLUS264™

Fall Time (Typ) :

54 ns

Terminal Position :

Single

Brand :

IXYS

Rds On Max :

240 mΩ

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

19000pF @ 25V

Min Operating Temperature :

-55 °C

Input Capacitance :

19 nF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

26 Weeks

Pin Count :

3

Drain-source On Resistance-Max :

0.24Ohm

Power Dissipation :

357W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Width :

5.21 mm

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

22A

Drain to Source Resistance :

240 mΩ

Vgs (Max) :

±30V

Series :

HiPerFET™, PolarP2™

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

Reach Compliance Code :

Compliant

Max Operating Temperature :

150 °C

Rise Time :

68ns

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Case Connection :

Isolated

Element Configuration :

Single

DS Breakdown Voltage-Min :

1000 V

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

110A

JESD-30 Code :

R-PSIP-T3

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

Number of Channels :

1 Channel

Base Product Number :

IXFL44

Power Dissipation-Max (Abs) :

357 W

RoHS :

Details

Published :

2008

Surface Mount :

No

Additional Feature :

AVALANCHE RATED

Transistor Type :

1 N-Channel

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Product Type :

MOSFET

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

357W Tc

Turn-Off Delay Time :

90 ns

Number of Pins :

3

Transistor Polarity :

N-Channel

Supplier Device Package :

ISOPLUS264™

Pbfree Code :

yes

Product Status :

Active

Drain Current-Max (Abs) (ID) :

22 A

Drain to Source Breakdown Voltage :

1kV

Rds On (Max) @ Id, Vgs :

240m Ω @ 22A, 10V

Transistor Element Material :

SILICON

Package :

Tube

Maximum Operating Temperature :

+ 150 C

Avalanche Energy Rating (Eas) :

2000 mJ

Height :

26.42 mm