IXFL132N50P3

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Mfr.Part #
IXFL132N50P3
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 500V 63A ISOPLUS264
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
72 ns
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
5V @ 8mA
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.043Ohm
Brand :
IXYS
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
30V
Base Product Number :
IXFL132
Additional Feature :
AVALANCHE RATED
Avalanche Energy Rating (Eas) :
3000 mJ
Terminal Form :
THROUGH-HOLE
Product Type :
MOSFET
Number of Terminations :
3
Continuous Drain Current (ID) :
63A
Case Connection :
Isolated
Number of Channels :
1 Channel
Product Category :
MOSFET
Packaging :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Power Dissipation-Max :
520W Tc
Mounting Style :
Through Hole
RoHS :
Details
Series :
HiPerFET™, Polar3™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn On Delay Time :
44 ns
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
63A Tc
Number of Terminals :
3
Polarity/Channel Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Package :
Tube
Factory Lead Time :
26 Weeks
Transistor Polarity :
N-Channel
Pin Count :
3
Length :
20.29mm
DS Breakdown Voltage-Min :
500V
Pulsed Drain Current-Max (IDM) :
330A
Rds On (Max) @ Id, Vgs :
43m Ω @ 66A, 10V
Power Dissipation (Max) :
520W (Tc)
Operating Temperature :
-55°C~150°C TJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2011
Channel Mode :
Enhancement
Terminal Position :
Single
Minimum Operating Temperature :
- 55 C
Surface Mount :
No
Height :
26.42mm
Package / Case :
ISOPLUS264™
Vgs (Max) :
±30V
Package Shape :
RECTANGULAR
RoHS Status :
ROHS3 Compliant
Tradename :
HiPerFET
Drain to Source Voltage (Vdss) :
500V
Number of Pins :
264
JESD-30 Code :
R-PSIP-T3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
520 W
Drain Current-Max (Abs) (ID) :
63 A
Supplier Device Package :
ISOPLUS264™
Product Status :
Active
Number of Elements :
1
Reach Compliance Code :
Unknown
Maximum Operating Temperature :
+ 150 C
FET Feature :
-
Width :
5.31mm
Datasheets
IXFL132N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL132N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:ISOPLUS264™, Number of Pins:264, Mounting Type:Through Hole, IXFL132N50P3 pinout, IXFL132N50P3 datasheet PDF, IXFL132N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL132N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFL132N50P3


N-Channel Tube 43m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V ISOPLUS264™

IXFL132N50P3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 63A.63 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Peak drain current for this device is 330A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 44 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFL132N50P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 63A
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a 500V drain to source voltage (Vdss)


IXFL132N50P3 Applications


There are a lot of IXYS
IXFL132N50P3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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