IXFL132N50P3

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Mfr.Part #
IXFL132N50P3
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 500V 63A ISOPLUS264
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
3
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Height :
26.42mm
Gate to Source Voltage (Vgs) :
30V
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Terminal Position :
Single
Transistor Application :
SWITCHING
Power Dissipation (Max) :
520W (Tc)
Drain-source On Resistance-Max :
0.043Ohm
Product Type :
MOSFET
Number of Elements :
1
Turn-Off Delay Time :
72 ns
Vgs (Max) :
±30V
DS Breakdown Voltage-Min :
500V
Package / Case :
ISOPLUS264™
Product Status :
Active
Maximum Operating Temperature :
+ 150 C
Width :
5.31mm
RoHS :
Details
Manufacturer :
IXYS
Series :
HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs :
43m Ω @ 66A, 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Current - Continuous Drain (Id) @ 25°C :
63A Tc
FET Type :
N-Channel
Mount :
Through Hole
Brand :
IXYS
Number of Pins :
264
Mounting Style :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Turn On Delay Time :
44 ns
Product Category :
MOSFET
Package :
Tube
Reach Compliance Code :
Unknown
Tradename :
HiPerFET
Length :
20.29mm
Package Shape :
RECTANGULAR
Case Connection :
Isolated
Supplier Device Package :
ISOPLUS264™
Drain Current-Max (Abs) (ID) :
63 A
Transistor Element Material :
SILICON
Base Product Number :
IXFL132
Mounting Type :
Through Hole
Power Dissipation-Max :
520W Tc
Vgs(th) (Max) @ Id :
5V @ 8mA
Pin Count :
3
Drain to Source Voltage (Vdss) :
500V
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
330A
JESD-30 Code :
R-PSIP-T3
Avalanche Energy Rating (Eas) :
3000 mJ
Additional Feature :
AVALANCHE RATED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
26 Weeks
Power Dissipation-Max (Abs) :
520 W
FET Feature :
-
Published :
2011
Continuous Drain Current (ID) :
63A
Polarity/Channel Type :
N-Channel
Channel Mode :
Enhancement
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
Number of Channels :
1 Channel
Transistor Polarity :
N-Channel
Datasheets
IXFL132N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL132N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS264™, Number of Pins:264, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFL132N50P3 pinout, IXFL132N50P3 datasheet PDF, IXFL132N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL132N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFL132N50P3


N-Channel Tube 43m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V ISOPLUS264™

IXFL132N50P3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 63A.63 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Peak drain current for this device is 330A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 44 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFL132N50P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 63A
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a 500V drain to source voltage (Vdss)


IXFL132N50P3 Applications


There are a lot of IXYS
IXFL132N50P3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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