IXFL132N50P3

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Mfr.Part #
IXFL132N50P3
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 500V 63A ISOPLUS264
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
30V
Pin Count :
3
Surface Mount :
No
Series :
HiPerFET™, Polar3™
Drain to Source Voltage (Vdss) :
500V
RoHS :
Details
Published :
2011
Avalanche Energy Rating (Eas) :
3000 mJ
Power Dissipation (Max) :
520W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Status :
Active
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Mounting Style :
Through Hole
Number of Elements :
1
Turn-Off Delay Time :
72 ns
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Transistor Polarity :
N-Channel
Channel Mode :
Enhancement
Maximum Operating Temperature :
+ 150 C
Product Type :
MOSFET
Packaging :
Tube
Power Dissipation-Max (Abs) :
520 W
JESD-30 Code :
R-PSIP-T3
Case Connection :
Isolated
FET Feature :
-
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
DS Breakdown Voltage-Min :
500V
Vgs (Max) :
±30V
Package Shape :
RECTANGULAR
Mount :
Through Hole
Additional Feature :
AVALANCHE RATED
Number of Pins :
264
Number of Terminals :
3
Package / Case :
ISOPLUS264™
Terminal Form :
THROUGH-HOLE
Width :
5.31mm
Height :
26.42mm
Vgs(th) (Max) @ Id :
5V @ 8mA
Number of Channels :
1 Channel
Product Category :
MOSFET
Factory Lead Time :
26 Weeks
Length :
20.29mm
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
63 A
RoHS Status :
ROHS3 Compliant
FET Type :
N-Channel
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.043Ohm
Power Dissipation-Max :
520W Tc
Pulsed Drain Current-Max (IDM) :
330A
Manufacturer :
IXYS
Rds On (Max) @ Id, Vgs :
43m Ω @ 66A, 10V
Minimum Operating Temperature :
- 55 C
Continuous Drain Current (ID) :
63A
Reach Compliance Code :
Unknown
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Brand :
IXYS
Current - Continuous Drain (Id) @ 25°C :
63A Tc
Supplier Device Package :
ISOPLUS264™
Mounting Type :
Through Hole
Turn On Delay Time :
44 ns
Package :
Tube
Base Product Number :
IXFL132
Tradename :
HiPerFET
Polarity/Channel Type :
N-Channel
Datasheets
IXFL132N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL132N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:264, Package / Case:ISOPLUS264™, Number of Channels:1 Channel, Number of Terminations:3, Mounting Type:Through Hole, IXFL132N50P3 pinout, IXFL132N50P3 datasheet PDF, IXFL132N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL132N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFL132N50P3


N-Channel Tube 43m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V ISOPLUS264™

IXFL132N50P3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 63A.63 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Peak drain current for this device is 330A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 44 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFL132N50P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 63A
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a 500V drain to source voltage (Vdss)


IXFL132N50P3 Applications


There are a lot of IXYS
IXFL132N50P3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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