IXFL132N50P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Supplier Device Package :

ISOPLUS264™

Polarity/Channel Type :

N-Channel

Rds On (Max) @ Id, Vgs :

43m Ω @ 66A, 10V

Package :

Tube

Transistor Application :

SWITCHING

Terminal Position :

Single

Tradename :

HiPerFET

FET Feature :

-

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Number of Terminations :

3

Number of Channels :

1 Channel

Number of Elements :

1

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.043Ohm

Number of Pins :

264

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Product Number :

IXFL132

Vgs (Max) :

±30V

Maximum Operating Temperature :

+ 150 C

Pulsed Drain Current-Max (IDM) :

330A

Continuous Drain Current (ID) :

63A

Minimum Operating Temperature :

- 55 C

Turn-Off Delay Time :

72 ns

Product Status :

Active

Number of Terminals :

3

Series :

HiPerFET™, Polar3™

DS Breakdown Voltage-Min :

500V

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

500V

Turn On Delay Time :

44 ns

FET Type :

N-Channel

Manufacturer :

IXYS

Transistor Polarity :

N-Channel

RoHS Status :

ROHS3 Compliant

Product Type :

MOSFET

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

THROUGH-HOLE

Width :

5.31mm

Input Capacitance (Ciss) (Max) @ Vds :

18600pF @ 25V

Height :

26.42mm

RoHS :

Details

Mounting Style :

Through Hole

JESD-30 Code :

R-PSIP-T3

Avalanche Energy Rating (Eas) :

3000 mJ

Factory Lead Time :

26 Weeks

Brand :

IXYS

Surface Mount :

No

Channel Mode :

Enhancement

Mount :

Through Hole

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Package / Case :

ISOPLUS264™

Drain Current-Max (Abs) (ID) :

63 A

Power Dissipation-Max :

520W Tc

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

63A Tc

Power Dissipation (Max) :

520W (Tc)

Vgs(th) (Max) @ Id :

5V @ 8mA

Length :

20.29mm

Transistor Element Material :

SILICON

Power Dissipation-Max (Abs) :

520 W