IXFL132N50P3

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Mfr.Part #
IXFL132N50P3
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 500V 63A ISOPLUS264
Stock
25
In Stock :
25

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
500V
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminals :
3
JESD-30 Code :
R-PSIP-T3
Number of Elements :
1
Drain to Source Voltage (Vdss) :
500V
Terminal Form :
THROUGH-HOLE
Length :
20.29mm
Packaging :
Tube
Power Dissipation (Max) :
520W (Tc)
Turn On Delay Time :
44 ns
Additional Feature :
AVALANCHE RATED
Package / Case :
ISOPLUS264™
Turn-Off Delay Time :
72 ns
Published :
2011
Gate to Source Voltage (Vgs) :
30V
Mounting Style :
Through Hole
Pulsed Drain Current-Max (IDM) :
330A
Product Type :
MOSFET
FET Feature :
-
Avalanche Energy Rating (Eas) :
3000 mJ
Factory Lead Time :
26 Weeks
Power Dissipation-Max (Abs) :
520 W
Channel Mode :
Enhancement
Series :
HiPerFET™, Polar3™
Operating Temperature :
-55°C~150°C TJ
Base Product Number :
IXFL132
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
Unknown
RoHS :
Details
Number of Channels :
1 Channel
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
18600pF @ 25V
Vgs(th) (Max) @ Id :
5V @ 8mA
Height :
26.42mm
Manufacturer :
IXYS
Case Connection :
Isolated
Drain-source On Resistance-Max :
0.043Ohm
Current - Continuous Drain (Id) @ 25°C :
63A Tc
Number of Terminations :
3
Product Status :
Active
Supplier Device Package :
ISOPLUS264™
Surface Mount :
No
Package :
Tube
Tradename :
HiPerFET
Brand :
IXYS
Number of Pins :
264
Power Dissipation-Max :
520W Tc
Mount :
Through Hole
Vgs (Max) :
±30V
Polarity/Channel Type :
N-Channel
Rds On (Max) @ Id, Vgs :
43m Ω @ 66A, 10V
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Pin Count :
3
Operating Mode :
ENHANCEMENT MODE
Maximum Operating Temperature :
+ 150 C
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
63 A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
63A
Transistor Application :
SWITCHING
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Width :
5.31mm
Mounting Type :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Datasheets
IXFL132N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL132N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:ISOPLUS264™, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:264, Mounting Type:Through Hole, IXFL132N50P3 pinout, IXFL132N50P3 datasheet PDF, IXFL132N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL132N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFL132N50P3


N-Channel Tube 43m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V ISOPLUS264™

IXFL132N50P3 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 63A.63 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Peak drain current for this device is 330A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 44 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.

IXFL132N50P3 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 63A
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a 500V drain to source voltage (Vdss)


IXFL132N50P3 Applications


There are a lot of IXYS
IXFL132N50P3 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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