IXFL132N50P3
- Mfr.Part #
- IXFL132N50P3
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 63A ISOPLUS264
- Stock
- 25
- In Stock :
- 25
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 500V
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Terminals :
- 3
- JESD-30 Code :
- R-PSIP-T3
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 500V
- Terminal Form :
- THROUGH-HOLE
- Length :
- 20.29mm
- Packaging :
- Tube
- Power Dissipation (Max) :
- 520W (Tc)
- Turn On Delay Time :
- 44 ns
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- ISOPLUS264™
- Turn-Off Delay Time :
- 72 ns
- Published :
- 2011
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 330A
- Product Type :
- MOSFET
- FET Feature :
- -
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Factory Lead Time :
- 26 Weeks
- Power Dissipation-Max (Abs) :
- 520 W
- Channel Mode :
- Enhancement
- Series :
- HiPerFET™, Polar3™
- Operating Temperature :
- -55°C~150°C TJ
- Base Product Number :
- IXFL132
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- Unknown
- RoHS :
- Details
- Number of Channels :
- 1 Channel
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 18600pF @ 25V
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Height :
- 26.42mm
- Manufacturer :
- IXYS
- Case Connection :
- Isolated
- Drain-source On Resistance-Max :
- 0.043Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 63A Tc
- Number of Terminations :
- 3
- Product Status :
- Active
- Supplier Device Package :
- ISOPLUS264™
- Surface Mount :
- No
- Package :
- Tube
- Tradename :
- HiPerFET
- Brand :
- IXYS
- Number of Pins :
- 264
- Power Dissipation-Max :
- 520W Tc
- Mount :
- Through Hole
- Vgs (Max) :
- ±30V
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 43m Ω @ 66A, 10V
- Minimum Operating Temperature :
- - 55 C
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Operating Temperature :
- + 150 C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 63 A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 63A
- Transistor Application :
- SWITCHING
- Transistor Polarity :
- N-Channel
- Product Category :
- MOSFET
- Width :
- 5.31mm
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Datasheets
- IXFL132N50P3

N-Channel Tube 43m Ω @ 66A, 10V ±30V 18600pF @ 25V 250nC @ 10V 500V ISOPLUS264™
IXFL132N50P3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 18600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 63A.63 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Peak drain current for this device is 330A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 44 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 500V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 500V.Using drive voltage (10V) reduces this device's overall power consumption.
IXFL132N50P3 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 63A
the turn-off delay time is 72 ns
based on its rated peak drain current 330A.
a 500V drain to source voltage (Vdss)
IXFL132N50P3 Applications
There are a lot of IXYS
IXFL132N50P3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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