IXFL44N60
- Mfr.Part #
- IXFL44N60
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 41A ISOPLUS264
- Stock
- 41,217
- In Stock :
- 41,217
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Active
- Number of Pins :
- 264
- Continuous Drain Current (ID) :
- 41A
- Power Dissipation (Max) :
- 500W (Tc)
- Tradename :
- HyperFET
- Product Type :
- MOSFET
- Element Configuration :
- Single
- Published :
- 2003
- Product Category :
- MOSFET
- Reach Compliance Code :
- Compliant
- DS Breakdown Voltage-Min :
- 600 V
- Manufacturer :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Turn On Delay Time :
- 42 ns
- Turn-Off Delay Time :
- 110 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation-Max :
- 500W Tc
- FET Type :
- N-Channel
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Number of Terminals :
- 3
- JESD-609 Code :
- e1
- Maximum Operating Temperature :
- + 150 C
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 500W
- Package Shape :
- RECTANGULAR
- Surface Mount :
- No
- Case Connection :
- Isolated
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Number of Channels :
- 1 Channel
- Rds On (Max) @ Id, Vgs :
- 130m Ω @ 22A, 10V
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Supplier Device Package :
- ISOPLUS264™
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Number of Terminations :
- 3
- Mounting Style :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 8900pF @ 25V
- Package :
- Tube
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS :
- Details
- FET Feature :
- --
- Width :
- 5.21mm
- Subcategory :
- MOSFETs
- Drain to Source Voltage (Vdss) :
- 600V
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Series :
- HiPerFET™
- Transistor Type :
- 1 N-Channel
- Pulsed Drain Current-Max (IDM) :
- 176A
- Height :
- 26.42mm
- Terminal Position :
- Single
- Package / Case :
- ISOPLUS264™
- Transistor Polarity :
- N-Channel
- Fall Time (Typ) :
- 45 ns
- Rise Time :
- 55ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Configuration :
- Single
- Base Product Number :
- IXFL44
- Terminal Form :
- THROUGH-HOLE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Length :
- 20.29mm
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code :
- R-PSIP-T3
- Drain-source On Resistance-Max :
- 0.13Ohm
- Datasheets
- IXFL44N60
IXFL44N60 Documents
N-Channel Tube 130m Ω @ 22A, 10V ±20V 8900pF @ 25V 330nC @ 10V 600V ISOPLUS264™
IXFL44N60 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 8900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 41A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 176A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 42 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFL44N60 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 176A.
a 600V drain to source voltage (Vdss)
IXFL44N60 Applications
There are a lot of IXYS
IXFL44N60 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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