IXFL44N60

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Mfr.Part #
IXFL44N60
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 600V 41A ISOPLUS264
Stock
41,217
In Stock :
41,217

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature :
+ 150 C
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
41A Tc
Supplier Device Package :
ISOPLUS264™
Mount :
Through Hole
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 10V
Package :
Tube
Width :
5.21mm
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Product Type :
MOSFET
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
45 ns
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Operating Temperature :
-55°C~150°C TJ
Channel Mode :
Enhancement
Pulsed Drain Current-Max (IDM) :
176A
FET Type :
N-Channel
Base Product Number :
IXFL44
Power Dissipation (Max) :
500W (Tc)
Rise Time :
55ns
Configuration :
Single
Surface Mount :
No
JESD-609 Code :
e1
Transistor Type :
1 N-Channel
RoHS :
Details
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.13Ohm
Avalanche Energy Rating (Eas) :
3000 mJ
Tradename :
HyperFET
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
600 V
Terminal Form :
THROUGH-HOLE
Input Capacitance (Ciss) (Max) @ Vds :
8900pF @ 25V
Packaging :
Tube
Minimum Operating Temperature :
- 55 C
Number of Terminals :
3
Transistor Polarity :
N-Channel
Turn-Off Delay Time :
110 ns
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JESD-30 Code :
R-PSIP-T3
Series :
HiPerFET™
Number of Pins :
264
Mounting Type :
Through Hole
Turn On Delay Time :
42 ns
Number of Elements :
1
Drain to Source Voltage (Vdss) :
600V
Mounting Style :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Height :
26.42mm
Drain to Source Breakdown Voltage :
600V
Product Category :
MOSFET
Number of Channels :
1 Channel
Additional Feature :
AVALANCHE RATED
Rds On (Max) @ Id, Vgs :
130m Ω @ 22A, 10V
Length :
20.29mm
Power Dissipation :
500W
Terminal Position :
Single
Package / Case :
ISOPLUS264™
Product Status :
Active
FET Feature :
--
Power Dissipation-Max :
500W Tc
Vgs (Max) :
±20V
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package Shape :
RECTANGULAR
Brand :
IXYS
Pin Count :
3
Element Configuration :
Single
Continuous Drain Current (ID) :
41A
Subcategory :
MOSFETs
Published :
2003
Case Connection :
Isolated
Number of Terminations :
3
Pbfree Code :
yes
Transistor Application :
SWITCHING
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL44N60 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:264, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:ISOPLUS264™, Number of Terminations:3, IXFL44N60 pinout, IXFL44N60 datasheet PDF, IXFL44N60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL44N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 130m Ω @ 22A, 10V ±20V 8900pF @ 25V 330nC @ 10V 600V ISOPLUS264™

IXFL44N60 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The maximum input capacitance of this device is 8900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 41A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 110 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 176A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 42 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFL44N60 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 176A.
a 600V drain to source voltage (Vdss)


IXFL44N60 Applications


There are a lot of IXYS
IXFL44N60 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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