IXFL60N80P
- Mfr.Part #
- IXFL60N80P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS264™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 40A ISOPLUS264
- Stock
- 5,441
- In Stock :
- 5,441
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Rise Time :
- 29ns
- Turn-Off Delay Time :
- 110 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 18000pF @ 25V
- Terminal Form :
- THROUGH-HOLE
- Pulsed Drain Current-Max (IDM) :
- 150A
- Manufacturer :
- IXYS
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On Max :
- 150 mΩ
- Subcategory :
- MOSFETs
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Tradename :
- HiPerFET
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 625W Tc
- Number of Pins :
- 3
- Drain to Source Resistance :
- 150 mΩ
- Max Operating Temperature :
- 150 °C
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation (Max) :
- 625W (Tc)
- Product Type :
- MOSFET
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- Input Capacitance :
- 18 nF
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Surface Mount :
- No
- Transistor Polarity :
- N-Channel
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±30V
- Base Product Number :
- IXFL60
- Product Status :
- Active
- Transistor Type :
- 1 N-Channel
- RoHS :
- Compliant
- Drain to Source Voltage (Vdss) :
- 800V
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 30A, 10V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- FET Feature :
- --
- Factory Lead Time :
- 26 Weeks
- Type :
- PolarHV HiPerFET Power MOSFET ISOPLUS264
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2006
- Product Category :
- MOSFET
- Brand :
- IXYS
- Height :
- 26.42 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- Package / Case :
- ISOPLUS264™
- Number of Elements :
- 1
- Element Configuration :
- Single
- Pin Count :
- 3
- Number of Channels :
- 1 Channel
- Supplier Device Package :
- ISOPLUS264™
- Maximum Operating Temperature :
- + 150 C
- Series :
- HiPerFET™, PolarHT™
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Resistance :
- 150mOhm
- Max Power Dissipation :
- 625 W
- Drain-source On Resistance-Max :
- 0.15 Ω
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Power Dissipation :
- 625W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 20.29 mm
- DS Breakdown Voltage-Min :
- 800 V
- Number of Terminals :
- 3
- Continuous Drain Current (ID) :
- 40A
- Number of Terminations :
- 3
- Width :
- 5.21 mm
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Fall Time (Typ) :
- 26 ns
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 800V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Min Operating Temperature :
- -55 °C
- Channel Mode :
- Enhancement
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Mounting Style :
- Through Hole
- Datasheets
- IXFL60N80P
N-Channel Tube 150m Ω @ 30A, 10V ±30V 18000pF @ 25V 250nC @ 10V 800V ISOPLUS264™
IXFL60N80P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 18000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 40A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 800V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 150A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 150 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800 V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFL60N80P Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 150A.
single MOSFETs transistor is 150 mΩ
a 800V drain to source voltage (Vdss)
IXFL60N80P Applications
There are a lot of IXYS
IXFL60N80P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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