IXFL60N80P

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Mfr.Part #
IXFL60N80P
Manufacturer
Littelfuse
Package / Case
ISOPLUS264™
Datasheet
Download
Description
MOSFET N-CH 800V 40A ISOPLUS264
Stock
5,441
In Stock :
5,441

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
Rise Time :
29ns
Turn-Off Delay Time :
110 ns
Input Capacitance (Ciss) (Max) @ Vds :
18000pF @ 25V
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
150A
Manufacturer :
IXYS
Case Connection :
Isolated
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On Max :
150 mΩ
Subcategory :
MOSFETs
Mount :
Through Hole
RoHS Status :
ROHS3 Compliant
Tradename :
HiPerFET
Transistor Element Material :
SILICON
Lead Free :
Lead Free
Power Dissipation-Max :
625W Tc
Number of Pins :
3
Drain to Source Resistance :
150 mΩ
Max Operating Temperature :
150 °C
Vgs(th) (Max) @ Id :
5V @ 8mA
Gate to Source Voltage (Vgs) :
30V
Power Dissipation (Max) :
625W (Tc)
Product Type :
MOSFET
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
Input Capacitance :
18 nF
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Surface Mount :
No
Transistor Polarity :
N-Channel
Pbfree Code :
yes
Qualification Status :
Not Qualified
Vgs (Max) :
±30V
Base Product Number :
IXFL60
Product Status :
Active
Transistor Type :
1 N-Channel
RoHS :
Compliant
Drain to Source Voltage (Vdss) :
800V
Rds On (Max) @ Id, Vgs :
150m Ω @ 30A, 10V
Mounting Type :
Through Hole
JESD-609 Code :
e1
FET Feature :
--
Factory Lead Time :
26 Weeks
Type :
PolarHV HiPerFET Power MOSFET ISOPLUS264
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2006
Product Category :
MOSFET
Brand :
IXYS
Height :
26.42 mm
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
Package / Case :
ISOPLUS264™
Number of Elements :
1
Element Configuration :
Single
Pin Count :
3
Number of Channels :
1 Channel
Supplier Device Package :
ISOPLUS264™
Maximum Operating Temperature :
+ 150 C
Series :
HiPerFET™, PolarHT™
FET Type :
N-Channel
Reach Compliance Code :
Compliant
Resistance :
150mOhm
Max Power Dissipation :
625 W
Drain-source On Resistance-Max :
0.15 Ω
Avalanche Energy Rating (Eas) :
5000 mJ
Power Dissipation :
625W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
20.29 mm
DS Breakdown Voltage-Min :
800 V
Number of Terminals :
3
Continuous Drain Current (ID) :
40A
Number of Terminations :
3
Width :
5.21 mm
Terminal Position :
Single
Package Shape :
RECTANGULAR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSIP-T3
Fall Time (Typ) :
26 ns
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
Transistor Application :
SWITCHING
Polarity/Channel Type :
N-Channel
Drain to Source Breakdown Voltage :
800V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
Single
Minimum Operating Temperature :
- 55 C
Min Operating Temperature :
-55 °C
Channel Mode :
Enhancement
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
40A Tc
Mounting Style :
Through Hole
Datasheets
IXFL60N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFL60N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Type:PolarHV HiPerFET Power MOSFET ISOPLUS264, Package / Case:ISOPLUS264™, Number of Channels:1 Channel, Number of Terminations:3, IXFL60N80P pinout, IXFL60N80P datasheet PDF, IXFL60N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFL60N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 150m Ω @ 30A, 10V ±30V 18000pF @ 25V 250nC @ 10V 800V ISOPLUS264™

IXFL60N80P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 5000 mJ.A device's maximal input capacitance is 18000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 40A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 800V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 110 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 150A, which is its maximum rated peak drain current.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 150 mΩ.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 800 V.This transistor requires a 800V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFL60N80P Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 150A.
single MOSFETs transistor is 150 mΩ
a 800V drain to source voltage (Vdss)


IXFL60N80P Applications


There are a lot of IXYS
IXFL60N80P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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