ZXMC4559DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

17 Weeks

Dual Supply Voltage :

60V

Turn On Delay Time :

3.5 ns

Element Configuration :

Dual

Drain to Source Breakdown Voltage :

60V

ECCN Code :

EAR99

Turn-Off Delay Time :

35 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1063pF @ 30V

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

2.1W

RoHS Status :

ROHS3 Compliant

Termination :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pin Count :

8

Height :

1.5mm

Power - Max :

1.25W

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Width :

4mm

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

4.1ns

Number of Channels :

2

Current - Continuous Drain (Id) @ 25°C :

3.6A 2.6A

Resistance :

105mOhm

Packaging :

Cut Tape (CT)

Weight :

73.992255mg

FET Type :

N and P-Channel

Continuous Drain Current (ID) :

4.7A

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Threshold Voltage :

1V

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

20.4nC @ 10V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.5A, 10V

Length :

5mm

Drain Current-Max (Abs) (ID) :

3.6A

Peak Reflow Temperature (Cel) :

260

Current Rating :

4.7A

Fall Time (Typ) :

10 ns

Transistor Application :

SWITCHING

Radiation Hardening :

No

Nominal Vgs :

1 V

Number of Pins :

8

Terminal Form :

Gull wing

JESD-609 Code :

e3

Number of Terminations :

8

Max Power Dissipation :

2.1W

Published :

2012

Pbfree Code :

yes

Mount :

Surface Mount

Lead Free :

Lead Free