ZXMC4559DN8TA
- Mfr.Part #
- ZXMC4559DN8TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 60V 8SOIC
- Stock
- 17,732
- In Stock :
- 17,732
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- FET Type :
- N and P-Channel
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 3.5 ns
- Max Power Dissipation :
- 2.1W
- Power Dissipation :
- 2.1W
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Height :
- 1.5mm
- Vgs(th) (Max) @ Id :
- 1V @ 250μA (Min)
- Turn-Off Delay Time :
- 35 ns
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A 2.6A
- Number of Terminations :
- 8
- Number of Elements :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1063pF @ 30V
- Factory Lead Time :
- 17 Weeks
- Element Configuration :
- Dual
- Number of Channels :
- 2
- Nominal Vgs :
- 1 V
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Dual Supply Voltage :
- 60V
- Number of Pins :
- 8
- Drain Current-Max (Abs) (ID) :
- 3.6A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Length :
- 5mm
- Threshold Voltage :
- 1V
- Weight :
- 73.992255mg
- Rise Time :
- 4.1ns
- Current Rating :
- 4.7A
- Drain to Source Breakdown Voltage :
- 60V
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 4.5A, 10V
- Termination :
- SMD/SMT
- Fall Time (Typ) :
- 10 ns
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- Operating Mode :
- ENHANCEMENT MODE
- Power - Max :
- 1.25W
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- Logic Level Gate
- Resistance :
- 105mOhm
- Width :
- 4mm
- Packaging :
- Cut Tape (CT)
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Drain Current (ID) :
- 4.7A
- Pbfree Code :
- yes
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 20.4nC @ 10V
- REACH SVHC :
- No SVHC
- Datasheets
- ZXMC4559DN8TA

ZXMC4559DN8TA datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at
The ZXMC4559DN8TA is a dual N/P-channel enhancement mode MOSFET from Diodes Inc. It is designed to provide high performance and low on-resistance in a small SOIC-8 package. This device is rated for a maximum drain-source voltage of 60 V and a maximum drain current of 8 A. It has a low on-resistance of 0.55 Ohm and a fast switching speed of 10 ns.
Features:
• Dual N/P-channel enhancement mode MOSFET
• Maximum drain-source voltage: 60 V
• Maximum drain current: 8 A
• Low on-resistance: 0.55 Ohm
• Fast switching speed: 10 ns
• Small SOIC-8 package
Applications:
The ZXMC4559DN8TA is suitable for a wide range of applications, including power management, motor control, and switching power supplies. It is also suitable for use in automotive, industrial, and consumer electronics.
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