ZXMC4559DN8TA

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Mfr.Part #
ZXMC4559DN8TA
Manufacturer
Diodes Incorporated
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N/P-CH 60V 8SOIC
Stock
17,732
In Stock :
17,732

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Arrays
JESD-609 Code :
e3
Threshold Voltage :
1V
Number of Terminations :
8
Lead Free :
Lead Free
Resistance :
105mOhm
Current Rating :
4.7A
Nominal Vgs :
1 V
Drain to Source Breakdown Voltage :
60V
Rds On (Max) @ Id, Vgs :
55m Ω @ 4.5A, 10V
Time@Peak Reflow Temperature-Max (s) :
40
Factory Lead Time :
17 Weeks
Length :
5mm
Published :
2012
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Pin Count :
8
Mount :
Surface Mount
Mounting Type :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
FET Type :
N and P-Channel
Dual Supply Voltage :
60V
Polarity/Channel Type :
N-CHANNEL AND P-CHANNEL
Operating Temperature :
-55°C~150°C TJ
FET Feature :
Logic Level Gate
Current - Continuous Drain (Id) @ 25°C :
3.6A 2.6A
Fall Time (Typ) :
10 ns
Terminal Form :
Gull wing
Pbfree Code :
yes
Number of Elements :
2
Power - Max :
1.25W
Peak Reflow Temperature (Cel) :
260
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Turn-Off Delay Time :
35 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Vgs(th) (Max) @ Id :
1V @ 250μA (Min)
Max Power Dissipation :
2.1W
Weight :
73.992255mg
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
3.5 ns
Continuous Drain Current (ID) :
4.7A
Termination :
SMD/SMT
Packaging :
Cut Tape (CT)
Power Dissipation :
2.1W
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs :
20.4nC @ 10V
Terminal Finish :
Matte Tin (Sn)
Drain Current-Max (Abs) (ID) :
3.6A
Width :
4mm
Radiation Hardening :
No
ECCN Code :
EAR99
Rise Time :
4.1ns
RoHS Status :
ROHS3 Compliant
Element Configuration :
Dual
Input Capacitance (Ciss) (Max) @ Vds :
1063pF @ 30V
Number of Pins :
8
Number of Channels :
2
Height :
1.5mm
Datasheets
ZXMC4559DN8TA
Introducing Transistors - FETs, MOSFETs - Arrays Diodes Incorporated ZXMC4559DN8TA from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, Number of Channels:2, ZXMC4559DN8TA pinout, ZXMC4559DN8TA datasheet PDF, ZXMC4559DN8TA amp .Beyond Transistors - FETs, MOSFETs - Arrays Diodes Incorporated ZXMC4559DN8TA ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXMC4559DN8TA


ZXMC4559DN8TA datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available at

Description:

The ZXMC4559DN8TA is a dual N/P-channel enhancement mode MOSFET from Diodes Inc. It is designed to provide high performance and low on-resistance in a small SOIC-8 package. This device is rated for a maximum drain-source voltage of 60 V and a maximum drain current of 8 A. It has a low on-resistance of 0.55 Ohm and a fast switching speed of 10 ns.

Features:

• Dual N/P-channel enhancement mode MOSFET
• Maximum drain-source voltage: 60 V
• Maximum drain current: 8 A
• Low on-resistance: 0.55 Ohm
• Fast switching speed: 10 ns
• Small SOIC-8 package

Applications:

The ZXMC4559DN8TA is suitable for a wide range of applications, including power management, motor control, and switching power supplies. It is also suitable for use in automotive, industrial, and consumer electronics.
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