ZXMC4559DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

3.6A

Gate Charge (Qg) (Max) @ Vgs :

20.4nC @ 10V

Termination :

SMD/SMT

Pbfree Code :

yes

FET Type :

N and P-Channel

Packaging :

Cut Tape (CT)

Nominal Vgs :

1 V

Mounting Type :

Surface Mount

Published :

2012

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Number of Channels :

2

Input Capacitance (Ciss) (Max) @ Vds :

1063pF @ 30V

Height :

1.5mm

Max Power Dissipation :

2.1W

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.5A, 10V

Factory Lead Time :

17 Weeks

Threshold Voltage :

1V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Number of Pins :

8

Length :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

3.6A 2.6A

FET Feature :

Logic Level Gate

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

35 ns

Number of Elements :

2

Power Dissipation :

2.1W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3

Dual Supply Voltage :

60V

Pin Count :

8

ECCN Code :

EAR99

Rise Time :

4.1ns

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Turn On Delay Time :

3.5 ns

Fall Time (Typ) :

10 ns

Peak Reflow Temperature (Cel) :

260

Weight :

73.992255mg

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

4.7A

Width :

4mm

Current Rating :

4.7A

Gate to Source Voltage (Vgs) :

20V

Power - Max :

1.25W

Element Configuration :

Dual

Resistance :

105mOhm

Radiation Hardening :

No