ZXMC6A09DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.1W

Rise Time :

5.8ns

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

45m Ω @ 8.2A, 10V

Number of Terminations :

8

Transistor Application :

SWITCHING

Pbfree Code :

yes

Turn-Off Delay Time :

55 ns

Factory Lead Time :

17 Weeks

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Resistance :

55mOhm

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

4.6 ns

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Current Rating :

5.1A

Width :

4mm

Power - Max :

1.8W

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Fall Time (Typ) :

23 ns

Current - Continuous Drain (Id) @ 25°C :

3.9A 3.7A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Weight :

73.992255mg

Packaging :

Tape and Reel (TR)

Number of Pins :

8

FET Type :

N and P-Channel

Radiation Hardening :

No

Continuous Drain Current (ID) :

5.1A

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

Height :

1.5mm

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOW THRESHOLD

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

2

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

2.1W

Published :

2006

Length :

5mm

Drain Current-Max (Abs) (ID) :

3.9A

Input Capacitance (Ciss) (Max) @ Vds :

1407pF @ 40V

Gate Charge (Qg) (Max) @ Vgs :

24.2nC @ 10V