ZXMC4A16DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.5A, 10V, 60m Ω @ 3.8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

3.7 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Channels :

2

Transistor Element Material :

SILICON

Length :

5mm

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Pin Count :

8

REACH SVHC :

No SVHC

Power Dissipation :

2.1W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Width :

4mm

Drain Current-Max (Abs) (ID) :

4A

FET Type :

N and P-Channel Complementary

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

40V

Current Rating :

4.7A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Number of Terminations :

8

Terminal Form :

Gull wing

ECCN Code :

EAR99

Packaging :

Cut Tape (CT)

Lead Free :

Lead Free

Weight :

73.992255mg

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

1.8W

FET Feature :

Logic Level Gate

Element Configuration :

Dual

Vgs(th) (Max) @ Id :

1V @ 250mA (Min)

Pbfree Code :

yes

Mount :

Surface Mount

Fall Time (Typ) :

18 ns

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 40V 1000pF @ 20V

Published :

2012

Continuous Drain Current (ID) :

5.2A

Height :

1.5mm

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

5.5ns

Current - Continuous Drain (Id) @ 25°C :

5.2A Ta 4.7A Ta

Turn-Off Delay Time :

33 ns

Resistance :

60mOhm

Transistor Application :

SWITCHING