ZXMC3F31DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.1W

Published :

2008

Continuous Drain Current (ID) :

4.9A

Turn On Delay Time :

1.9 ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Rise Time :

3ns

Fall Time (Typ) :

21 ns

FET Type :

N and P-Channel

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

608pF @ 15V

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

REACH SVHC :

No SVHC

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Feature :

Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Number of Terminations :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

-30V

Gate Charge (Qg) (Max) @ Vgs :

12.9nC @ 10V

Factory Lead Time :

17 Weeks

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

5.7A

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

6.8A 4.9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Max Power Dissipation :

1.8W

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

30 ns

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No