ZXMC3F31DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

1.8W

Power Dissipation :

2.1W

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

17 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate, 4.5V Drive

Fall Time (Typ) :

21 ns

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

FET Type :

N and P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3V @ 250µA

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Number of Pins :

8

Published :

2008

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Terminal Position :

Dual

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

608pF @ 15V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

12.9nC @ 10V

Pbfree Code :

yes

Rise Time :

3ns

Continuous Drain Current (ID) :

4.9A

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

5.7A

Pin Count :

8

Turn-Off Delay Time :

30 ns

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

6.8A 4.9A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

1.9 ns

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

-30V