ZXMC3A17DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

12.2nC @ 10V

Weight :

73.992255mg

Rds On (Max) @ Id, Vgs :

50m Ω @ 7.8A, 10V

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Application :

SWITCHING

Published :

2006

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

1.7 ns

Drain-source On Resistance-Max :

0.05Ohm

Turn-Off Delay Time :

29.2 ns

Drain Current-Max (Abs) (ID) :

5.4A

Mount :

Surface Mount

Qualification Status :

Not Qualified

Pin Count :

8

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.25W

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

3.4A

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V

FET Type :

N and P-Channel

Number of Channels :

2

Current - Continuous Drain (Id) @ 25°C :

4.1A 3.4A

Lead Free :

Lead Free

Number of Pins :

8

Drain to Source Breakdown Voltage :

30V

RoHS Status :

RoHS Compliant

Rise Time :

2.9ns

Fall Time (Typ) :

2.9 ns

FET Feature :

Logic Level Gate

Max Power Dissipation :

1.25W

Terminal Form :

Gull wing

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99