ZXMC3A17DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.05Ohm

Continuous Drain Current (ID) :

3.4A

Published :

2006

Drain to Source Breakdown Voltage :

30V

Weight :

73.992255mg

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

5.4A

Gate Charge (Qg) (Max) @ Vgs :

12.2nC @ 10V

Terminal Form :

Gull wing

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

2

Power Dissipation :

1.25W

Max Power Dissipation :

1.25W

Qualification Status :

Not Qualified

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

50m Ω @ 7.8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N and P-Channel

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Turn On Delay Time :

1.7 ns

Fall Time (Typ) :

2.9 ns

Terminal Position :

Dual

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Rise Time :

2.9ns

Pin Count :

8

Number of Pins :

8

Turn-Off Delay Time :

29.2 ns

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Current - Continuous Drain (Id) @ 25°C :

4.1A 3.4A