ZXMC10A816N8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Height :

1.5mm

FET Type :

N and P-Channel

Turn-Off Delay Time :

20 ns

Mount :

Surface Mount

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Terminal Form :

Gull wing

Turn On Delay Time :

4.3 ns

Time@Peak Reflow Temperature-Max (s) :

40

Length :

4.95mm

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Width :

3.95mm

Number of Pins :

8

Rise Time :

5.2ns

Power Dissipation :

2.1W

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

1.7A

Weight :

73.992255mg

Terminal Position :

Dual

Factory Lead Time :

17 Weeks

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

9.2nC @ 10V

Max Power Dissipation :

1.8W

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Number of Elements :

2

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

497pF @ 50V

Number of Terminations :

8

Fall Time (Typ) :

12 ns

Rds On (Max) @ Id, Vgs :

230m Ω @ 1A, 10V

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

2A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Published :

2005

Pulsed Drain Current-Max (IDM) :

9.4A

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

100V