ZXMC3AMCTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

High Reliability

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

17 Weeks

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.5A, 10V

Width :

2.075mm

Rise Time :

2.8ns

Published :

2010

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Resistance :

210mOhm

Package / Case :

8-WDFN Exposed Pad

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.45W

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

2.1A

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

2

Lead Free :

Lead Free

Length :

3.08mm

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

3V @ 250µA

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

13A

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

2.9A 2.1A

FET Feature :

Logic Level Gate

JESD-609 Code :

e4

Max Power Dissipation :

1.7W

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

11.3 ns

Drain Current-Max (Abs) (ID) :

3.7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N and P-Channel

Mount :

Surface Mount

Fall Time (Typ) :

7.5 ns

Turn On Delay Time :

1.5 ns

Height :

780μm

Number of Terminations :

8

Drain to Source Breakdown Voltage :

-30V