ZXMC3A17DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

2.9ns

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Current Rating :

5.4A

Factory Lead Time :

17 Weeks

Number of Channels :

2

Current - Continuous Drain (Id) @ 25°C :

4.1A 3.4A

Height :

1.5mm

Max Power Dissipation :

2.1W

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Weight :

73.992255mg

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

Resistance :

70mOhm

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Terminations :

8

Terminal Position :

Dual

Length :

5mm

FET Type :

N and P-Channel

Lead Free :

Lead Free

Threshold Voltage :

1V

Rds On (Max) @ Id, Vgs :

50m Ω @ 7.8A, 10V

Turn-Off Delay Time :

29.2 ns

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

5.4A

Published :

2006

FET Feature :

Logic Level Gate

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

8

Power - Max :

1.25W

Power Dissipation :

2.1W

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Pin Count :

8

Width :

4mm

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

12.2nC @ 10V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Fall Time (Typ) :

8.7 ns

Terminal Form :

Gull wing

Turn On Delay Time :

1.7 ns