ZXMC3A18DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current Rating :

7.6A

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

9.5ns

FET Type :

N and P-Channel

Published :

2012

Height :

1.5mm

Width :

4mm

Max Power Dissipation :

1.8W

Rds On (Max) @ Id, Vgs :

25m Ω @ 5.8A, 10V

Pin Count :

8

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Turn-Off Delay Time :

60 ns

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Number of Pins :

8

Continuous Drain Current (ID) :

4.8A

Fall Time (Typ) :

38 ns

Mount :

Surface Mount

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

5.8A 4.8A

Length :

5mm

Voltage - Rated DC :

30V

Turn On Delay Time :

4.8 ns

Weight :

73.992255mg

Number of Channels :

2

FET Feature :

Logic Level Gate

Package / Case :

8-SOIC (0.154, 3.90mm Width)