ZXMC4A16DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

FET Type :

N and P-Channel Complementary

Drain to Source Voltage (Vdss) :

40V

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

4A

RoHS Status :

RoHS Compliant

Max Power Dissipation :

1.25W

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Published :

2012

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Power - Max :

2.1W

Pulsed Drain Current-Max (IDM) :

24A

Terminal Position :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 40V 1000pF @ 20V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.5A, 10V, 60m Ω @ 3.8A, 10V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

JESD-30 Code :

R-PDSO-G8

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

40V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

8

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

5.2A Ta 4.7A Ta

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

3.6A

Terminal Form :

Gull wing

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.05Ohm

Vgs(th) (Max) @ Id :

1V @ 250mA (Min)

Pin Count :

8