ZXMC4A16DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G8

Rds On (Max) @ Id, Vgs :

50m Ω @ 4.5A, 10V, 60m Ω @ 3.8A, 10V

Continuous Drain Current (ID) :

3.6A

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

24A

DS Breakdown Voltage-Min :

40V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

5.2A Ta 4.7A Ta

JESD-609 Code :

e3

Mount :

Surface Mount

Published :

2012

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 40V 1000pF @ 20V

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 250mA (Min)

Transistor Application :

SWITCHING

Max Power Dissipation :

1.25W

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Terminal Form :

Gull wing

Number of Terminations :

8

FET Type :

N and P-Channel Complementary

Drain Current-Max (Abs) (ID) :

4A

Drain to Source Voltage (Vdss) :

40V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.05Ohm

Power - Max :

2.1W