ZXMC3A16DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

2.1W

Continuous Drain Current (ID) :

4.1A

Input Capacitance (Ciss) (Max) @ Vds :

796pF @ 25V

Rds On (Max) @ Id, Vgs :

35m Ω @ 9A, 10V

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Length :

5mm

JESD-609 Code :

e3

Turn-Off Delay Time :

21.6 ns

Width :

4mm

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

17.5nC @ 10V

Current Rating :

6.4A

Gate to Source Voltage (Vgs) :

20V

Rise Time :

6.4ns

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated DC :

30V

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Pbfree Code :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

3 ns

Height :

1.5mm

Current - Continuous Drain (Id) @ 25°C :

4.9A 4.1A

Mount :

Surface Mount

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Number of Terminations :

8

FET Feature :

Logic Level Gate

Fall Time (Typ) :

9.4 ns

Terminal Form :

Gull wing

Number of Pins :

8

Max Power Dissipation :

1.25W

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Factory Lead Time :

17 Weeks

Additional Feature :

LOW THRESHOLD

FET Type :

N and P-Channel

Weight :

73.992255mg

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

4.9A

Resistance :

48mOhm