STGP3NB60HD
- Mfr.Part #
- STGP3NB60HD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 10A 50W TO220
- Stock
- 39,046
- In Stock :
- 39,046
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Current Rating :
- 6A
- Collector Emitter Voltage (VCEO) :
- 2.8V
- Test Condition :
- 480V, 3A, 10 Ω, 15V
- Current - Collector Pulsed (Icm) :
- 24A
- Transistor Application :
- Motor Control
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- Max Collector Current :
- 10A
- Gate-Emitter Voltage-Max :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 2.8V
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STGP3
- Max Power Dissipation :
- 50W
- JEDEC-95 Code :
- TO-220AB
- Mount :
- Through Hole
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 600V
- JESD-609 Code :
- e3
- Turn Off Time-Nom (toff) :
- 168 ns
- Switching Energy :
- 33μJ (off)
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 3A
- Number of Terminations :
- 3
- Packaging :
- Tube
- Turn On Time :
- 16 ns
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reverse Recovery Time :
- 45ns
- Td (on/off) @ 25°C :
- 5ns/53ns
- Voltage - Rated DC :
- 600V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Power Dissipation :
- 50W
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Polarity/Channel Type :
- N-Channel
- Input Type :
- Standard
- Element Configuration :
- Single
- Gate Charge :
- 21nC
- Gate-Emitter Thr Voltage-Max :
- 5V
- Drain to Source Voltage (Vdss) :
- 600V
- Continuous Drain Current (ID) :
- 3A
- Series :
- PowerMESH™
- Datasheets
- STGP3NB60HD

STGP3NB60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGP3NB60HD Description
STGP3NB60HD transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGP3NB60HD MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics STGP3NB60HD has the common source configuration.
STGP3NB60HD Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
STGP3NB60HD Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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