STGP10NC60S

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-55°C~150°C TJ

Td (on/off) @ 25°C :

19ns/160ns

Power - Max :

62.5W

Packaging :

Tube

Mount :

Through Hole

Gate-Emitter Voltage-Max :

20V

Switching Energy :

60μJ (on), 340μJ (off)

Turn Off Time-Nom (toff) :

560 ns

Collector Emitter Breakdown Voltage :

600V

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

62.5W

Vce(on) (Max) @ Vge, Ic :

1.65V @ 15V, 5A

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Series :

PowerMESH™

Gate Charge :

18nC

JESD-609 Code :

e3

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

Test Condition :

390V, 5A, 10 Ω, 15V

Base Part Number :

STGP10

Current - Collector Pulsed (Icm) :

25A

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Input Type :

Standard

Mounting Type :

Through Hole

Pbfree Code :

yes

Pin Count :

3

Turn On Time :

22.5 ns

Max Collector Current :

21A

Gate-Emitter Thr Voltage-Max :

5.75V

Transistor Application :

Motor Control

ECCN Code :

EAR99

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

600V