STGP12NB60HD
- Mfr.Part #
- STGP12NB60HD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 600V 30A 125W TO220
- Stock
- 49,353
- In Stock :
- 49,353
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - IGBTs - Single
- Turn On Time :
- 51 ns
- Collector Emitter Saturation Voltage :
- 2V
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 100W
- Test Condition :
- 480V, 12A, 10 Ω, 15V
- Series :
- PowerMESH™
- Current Rating :
- 18A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Td (on/off) @ 25°C :
- 5ns/91ns
- Power - Max :
- 125W
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Base Part Number :
- STGP12
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Gate Charge :
- 68nC
- JESD-609 Code :
- e3
- Turn Off Time-Nom (toff) :
- 295 ns
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 18A
- Collector Emitter Breakdown Voltage :
- 600V
- Current - Collector Pulsed (Icm) :
- 60A
- Drain to Source Voltage (Vdss) :
- 600V
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Matte Tin (Sn)
- JEDEC-95 Code :
- TO-220AB
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Max Power Dissipation :
- 125W
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 12A
- Switching Energy :
- 210μJ (off)
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Gate-Emitter Thr Voltage-Max :
- 5V
- Gate-Emitter Voltage-Max :
- 20V
- Max Collector Current :
- 30A
- Reverse Recovery Time :
- 80 ns
- Transistor Application :
- Motor Control
- Number of Terminations :
- 3
- Input Type :
- Standard
- Package / Case :
- TO-220-3
- Collector Emitter Voltage (VCEO) :
- 2.8V
- Datasheets
- STGP12NB60HD

STGP12NB60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at
STGP12NB60HD Description
The STGP12NB60HD is an Insulated Gate Bipolar Transistor featuring a robust and non-punch through (NPT) Trench construction, providing superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT STGP12NB60HD is well suited for hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.
STGP12NB60HD Features
Low saturation voltage resulting in low conduction loss
Low switching loss in higher frequency applications
Soft fast reverse recovery diode
Excellent current versus package size performance density
10μs Short-circuit capability
STGP12NB60HD Applications
Motor Drive & Control
Power Management
Consumer Electronics
High-frequency motor controls
SMPS and PFC in both hard switch and resonant topologies
UPS
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