STGP12NB60HD

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Mfr.Part #
STGP12NB60HD
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 30A 125W TO220
Stock
49,353
In Stock :
49,353

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - IGBTs - Single
Turn On Time :
51 ns
Collector Emitter Saturation Voltage :
2V
Polarity/Channel Type :
N-Channel
Power Dissipation :
100W
Test Condition :
480V, 12A, 10 Ω, 15V
Series :
PowerMESH™
Current Rating :
18A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Td (on/off) @ 25°C :
5ns/91ns
Power - Max :
125W
Packaging :
Tube
Lead Free :
Lead Free
Mounting Type :
Through Hole
Base Part Number :
STGP12
Mount :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Gate Charge :
68nC
JESD-609 Code :
e3
Turn Off Time-Nom (toff) :
295 ns
Operating Temperature :
150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
18A
Collector Emitter Breakdown Voltage :
600V
Current - Collector Pulsed (Icm) :
60A
Drain to Source Voltage (Vdss) :
600V
Qualification Status :
Not Qualified
Terminal Finish :
Matte Tin (Sn)
JEDEC-95 Code :
TO-220AB
Number of Elements :
1
Transistor Element Material :
SILICON
Number of Pins :
3
Max Power Dissipation :
125W
Vce(on) (Max) @ Vge, Ic :
2.8V @ 15V, 12A
Switching Energy :
210μJ (off)
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Voltage - Rated DC :
600V
Gate-Emitter Thr Voltage-Max :
5V
Gate-Emitter Voltage-Max :
20V
Max Collector Current :
30A
Reverse Recovery Time :
80 ns
Transistor Application :
Motor Control
Number of Terminations :
3
Input Type :
Standard
Package / Case :
TO-220-3
Collector Emitter Voltage (VCEO) :
2.8V
Datasheets
STGP12NB60HD
Introducing Transistors - IGBTs - Single STMicroelectronics STGP12NB60HD from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:STGP12, Operating Temperature:150°C TJ, Number of Pins:3, Number of Terminations:3, Package / Case:TO-220-3, STGP12NB60HD pinout, STGP12NB60HD datasheet PDF, STGP12NB60HD amp .Beyond Transistors - IGBTs - Single STMicroelectronics STGP12NB60HD ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STGP12NB60HD


STGP12NB60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at

STGP12NB60HD Description


The STGP12NB60HD is an Insulated Gate Bipolar Transistor featuring a robust and non-punch through (NPT) Trench construction, providing superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT STGP12NB60HD is well suited for hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.



STGP12NB60HD Features


Low saturation voltage resulting in low conduction loss

Low switching loss in higher frequency applications

Soft fast reverse recovery diode

Excellent current versus package size performance density

10μs Short-circuit capability



STGP12NB60HD Applications


Motor Drive & Control

Power Management

Consumer Electronics

High-frequency motor controls

SMPS and PFC in both hard switch and resonant topologies

UPS




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