IKD15N60RATMA1
- Mfr.Part #
- IKD15N60RATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 30A TO252-3
- Stock
- 34,180
- In Stock :
- 34,180
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Series :
- TRENCHSTOP™
- Max Collector Current :
- 30A
- Number of Pins :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 15A
- Number of Terminations :
- 2
- Test Condition :
- 400V, 15A, 15 Ω, 15V
- Collector Emitter Breakdown Voltage :
- 600V
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Input Type :
- Standard
- Pbfree Code :
- No
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Turn On Time :
- 26 ns
- Lead Free :
- Contains Lead
- Gate-Emitter Thr Voltage-Max :
- 5.7V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Current - Collector Pulsed (Icm) :
- 45A
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- N-Channel
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Reverse Recovery Time :
- 110 ns
- Qualification Status :
- Not Qualified
- Transistor Application :
- POWER CONTROL
- Switching Energy :
- 370μJ (on), 530μJ (off)
- Max Power Dissipation :
- 250W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -40°C~175°C TJ
- Factory Lead Time :
- 16 Weeks
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 2.1V
- Power - Max :
- 250W
- Gate-Emitter Voltage-Max :
- 20V
- Turn Off Time-Nom (toff) :
- 430 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2013
- JESD-609 Code :
- e3
- IGBT Type :
- Trench Field Stop
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Td (on/off) @ 25°C :
- 16ns/183ns
- Gate Charge :
- 90nC
- Halogen Free :
- Halogen Free
- Max Breakdown Voltage :
- 600V
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- IKD15N60RATMA1

IKD15N60RATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IKD15N60RATMA1 Description
IKD15N60RATMA1 is a single IGBT from the manufacturer Infineon Technologies with a breakdown voltage of 400V. The operating temperature of IKD15N60RATMA1 is -55°C~175°C TJ and its Current - Collector (Ic) (Max) is 10A. IKD15N60RATMA1 has 3 pins and it is available in Die packaging way. The Voltage - Collector Emitter Breakdown (Max) of IKD15N60RATMA1 is 600V.
IKD15N60RATMA1 Features
-
Optimised VCEs at and VF for low conduction losses
-
Smooth switching performance leading to low EMI levels
-
Very tight parameter distribution
-
Operating range of 1to20 kHz
-
Maximum junction temperature 175°C
-
Short circuit capability of 5μs
IKD15N60RATMA1 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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