IKD10N60RAATMA2
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- Mfr.Part #
- IKD10N60RAATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 20A 150W TO252-3
- Stock
- 10,016
- In Stock ：
- 10,016
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Test Condition :
- 400V, 10A, 23 Ω, 15V
- Reverse Recovery Time :
- 62 ns
- Element Configuration :
- Single
- Current - Collector Pulsed (Icm) :
- 30A
- Lead Free :
- Contains Lead
- Collector Emitter Breakdown Voltage :
- 600V
- Operating Temperature :
- -40°C~175°C TJ
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Input Type :
- Standard
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 17 Weeks
- Transistor Application :
- GENERAL PURPOSE
- Gate Charge :
- 64nC
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- N-Channel
- Published :
- 2014
- RoHS Status :
- ROHS3 Compliant
- Power - Max :
- 150W
- Turn On Time :
- 24 ns
- Halogen Free :
- Halogen Free
- Collector Emitter Voltage (VCEO) :
- 600V
- Base Part Number :
- *KD10N60
- Max Power Dissipation :
- 150W
- Max Collector Current :
- 20A
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Mount :
- Surface Mount
- Turn Off Time-Nom (toff) :
- 428 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- LOW CONDUCTION LOSS
- IGBT Type :
- Trench
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Td (on/off) @ 25°C :
- 14ns/192ns
- JESD-30 Code :
- R-PSSO-G2
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 10A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Series :
- TrenchStop®
- Reference Standard :
- AEC-Q101
- Datasheets
- IKD10N60RAATMA2
IKD10N60RAATMA2 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IKD10N60RAATMA2 Description
IKD10N60RAATMA2 is a 600V IGBT with integrated diode in packages offering space-saving advantages. IKD10N60RAATMA2 is manufactured by Infineon. Its category belongs to Electronic Components ICs. It is applied to many fields, like Industrial Industrial transport (non-car & non-light truck) Enterprise systems Datacenter & enterprise computing Personal electronics Tablets. And the main parameter of this part is Trans IGBT Chip N-CH 600V 20A 3-Pin TO-252 T/R. Additionally, it is green and compliant with RoHS (Lead-free / RoHS Compliant).
IKD10N60RAATMA2 Features
Optimised VcEsat and VF for low conduction losses
Smooth switching performance leading to low EMI levels
Very tight parameter distribution Operating range of 1 to 20kHz
Maximum junction temperature 175°C
Short circuit capability of 5μs
Best in class current versus package size performance
Qualified according to AECQ101
Pb-free lead plating; RoHS compliant (for PG-TO252: solder temperature 260°C, MSL1)
IKD10N60RAATMA2 Applications
HIDlighting
Piezoinject
Industrial
Industrial transport (non-car & non-light truck)
Enterprise systems
Datacenter & enterprise computing
Personal electronics
Tablets
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