IKD10N60R

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 10A

Case Connection :

COLLECTOR

Transistor Application :

POWER CONTROL

Number of Terminations :

2

Power Dissipation-Max (Abs) :

150W

Base Part Number :

*KD10N60

Gate Charge :

64nC

Switching Energy :

590μJ

Gate-Emitter Thr Voltage-Max :

5.7V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn Off Time-Nom (toff) :

428 ns

JESD-30 Code :

R-PSSO-G2

Series :

TrenchStop®

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Test Condition :

400V, 10A, 23 Ω, 15V

Transistor Element Material :

SILICON

IGBT Type :

Trench

Terminal Position :

Single

Power - Max :

150W

ECCN Code :

EAR99

Gate-Emitter Voltage-Max :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Td (on/off) @ 25°C :

14ns/192ns

Mounting Type :

Surface Mount

Reverse Recovery Time :

62ns

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

Turn On Time :

24 ns

JESD-609 Code :

e3

Input Type :

Standard

Pbfree Code :

yes

Current - Collector Pulsed (Icm) :

30A

Current - Collector (Ic) (Max) :

20A

Voltage - Collector Emitter Breakdown (Max) :

600V

Published :

2011

Pin Count :

3

Surface Mount :

yes

Packaging :

Cut Tape (CT)

Operating Temperature :

-40°C~175°C TJ