IKD10N60R

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

Tin (Sn)

Td (on/off) @ 25°C :

14ns/192ns

Packaging :

Cut Tape (CT)

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Reverse Recovery Time :

62ns

Turn Off Time-Nom (toff) :

428 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Base Part Number :

*KD10N60

Current - Collector (Ic) (Max) :

20A

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Surface Mount :

yes

Number of Elements :

1

Current - Collector Pulsed (Icm) :

30A

Operating Temperature :

-40°C~175°C TJ

Polarity/Channel Type :

N-Channel

RoHS Status :

RoHS Compliant

Published :

2011

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Case Connection :

COLLECTOR

Gate-Emitter Voltage-Max :

20V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Power - Max :

150W

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

150W

Test Condition :

400V, 10A, 23 Ω, 15V

IGBT Type :

Trench

Gate-Emitter Thr Voltage-Max :

5.7V

Turn On Time :

24 ns

Terminal Position :

Single

Voltage - Collector Emitter Breakdown (Max) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Type :

Standard

Pin Count :

3

Series :

TrenchStop®

Pbfree Code :

yes

Gate Charge :

64nC

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 10A

Transistor Application :

POWER CONTROL

Switching Energy :

590μJ