FGH80N60FD2TU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Length :

15.87mm

Collector Emitter Breakdown Voltage :

600V

Package / Case :

TO-247-3

Case Connection :

COLLECTOR

Factory Lead Time :

5 Weeks

Published :

2009

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Pbfree Code :

yes

Transistor Application :

POWER CONTROL

Turn On Time :

74 ns

Collector Emitter Saturation Voltage :

600V

Power - Max :

290W

Width :

4.82mm

Test Condition :

400V, 40A, 10 Ω, 15V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Weight :

6.39g

JESD-609 Code :

e3

Current - Collector Pulsed (Icm) :

160A

Max Power Dissipation :

290W

Turn Off Time-Nom (toff) :

201 ns

Element Configuration :

Single

Packaging :

Tube

ECCN Code :

EAR99

Mount :

Through Hole

Input Type :

Standard

Reverse Recovery Time :

61 ns

Height :

20.82mm

Gate Charge :

120nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Radiation Hardening :

No

Gate-Emitter Voltage-Max :

20V

Gate-Emitter Thr Voltage-Max :

7V

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 40A

Polarity/Channel Type :

N-Channel

Number of Terminations :

3

Max Collector Current :

80A

Collector Emitter Voltage (VCEO) :

600V

Number of Elements :

1

HTS Code :

8541.29.00.95

Fall Time-Max (tf) :

100ns

Switching Energy :

1mJ (on), 520μJ (off)

JEDEC-95 Code :

TO-247AB

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

IGBT Type :

Field Stop

Td (on/off) @ 25°C :

21ns/126ns