FGH80N60FD2TU

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Mfr.Part #
FGH80N60FD2TU
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 80A 290W TO247
Stock
9,101
In Stock :
9,101

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Factory Lead Time :
5 Weeks
Polarity/Channel Type :
N-Channel
Gate-Emitter Voltage-Max :
20V
Mounting Type :
Through Hole
Length :
15.87mm
Transistor Element Material :
SILICON
HTS Code :
8541.29.00.95
Input Type :
Standard
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 40A
Collector Emitter Saturation Voltage :
600V
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Height :
20.82mm
Transistor Application :
POWER CONTROL
Td (on/off) @ 25°C :
21ns/126ns
Case Connection :
COLLECTOR
Fall Time-Max (tf) :
100ns
Turn On Time :
74 ns
Width :
4.82mm
IGBT Type :
Field Stop
ECCN Code :
EAR99
Mount :
Through Hole
Max Collector Current :
80A
Radiation Hardening :
No
Switching Energy :
1mJ (on), 520μJ (off)
Power - Max :
290W
Max Power Dissipation :
290W
Number of Pins :
3
Package / Case :
TO-247-3
Collector Emitter Voltage (VCEO) :
600V
Current - Collector Pulsed (Icm) :
160A
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JEDEC-95 Code :
TO-247AB
Published :
2009
Packaging :
Tube
Collector Emitter Breakdown Voltage :
600V
Terminal Finish :
Tin (Sn)
Gate-Emitter Thr Voltage-Max :
7V
Turn Off Time-Nom (toff) :
201 ns
Gate Charge :
120nC
JESD-609 Code :
e3
Weight :
6.39g
Test Condition :
400V, 40A, 10 Ω, 15V
RoHS Status :
ROHS3 Compliant
Reverse Recovery Time :
61 ns
Pbfree Code :
yes
REACH SVHC :
No SVHC
Number of Terminations :
3
Element Configuration :
Single
Datasheets
FGH80N60FD2TU
Introducing Transistors - IGBTs - Single onsemi FGH80N60FD2TU from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-247-3, Number of Terminations:3, FGH80N60FD2TU pinout, FGH80N60FD2TU datasheet PDF, FGH80N60FD2TU amp .Beyond Transistors - IGBTs - Single onsemi FGH80N60FD2TU ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH80N60FD2TU


FGH80N60FD2TU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

The ONSEMI FGH80N60FD2TU is a single IGBT transistor designed for use in high-power applications. This device features a 600V blocking voltage, 80A continuous current, and a maximum power dissipation of 290W. It is housed in a TO247 package, making it suitable for use in a wide variety of applications. The FGH80N60FD2TU is designed to provide superior performance and reliability in high-power applications, making it an ideal choice for industrial, automotive, and consumer electronics applications. It is also RoHS compliant, making it an environmentally friendly choice. With its high power handling capabilities and robust design, the ONSEMI FGH80N60FD2TU is an excellent choice for any high-power application.
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FGH80N60FDTU onsemi 1 IGBT 600V 80A 290W TO247
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