FGH80N60FD2TU

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Mfr.Part #
FGH80N60FD2TU
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 80A 290W TO247
Stock
9,101
In Stock :
9,101

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Gate-Emitter Voltage-Max :
20V
Case Connection :
COLLECTOR
Test Condition :
400V, 40A, 10 Ω, 15V
Transistor Element Material :
SILICON
Radiation Hardening :
No
Terminal Finish :
Tin (Sn)
Package / Case :
TO-247-3
Collector Emitter Voltage (VCEO) :
600V
Mount :
Through Hole
Number of Terminations :
3
Switching Energy :
1mJ (on), 520μJ (off)
Turn On Time :
74 ns
Max Collector Current :
80A
Element Configuration :
Single
Polarity/Channel Type :
N-Channel
Td (on/off) @ 25°C :
21ns/126ns
Published :
2009
JESD-609 Code :
e3
Reverse Recovery Time :
61 ns
Gate-Emitter Thr Voltage-Max :
7V
HTS Code :
8541.29.00.95
Height :
20.82mm
IGBT Type :
Field Stop
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
600V
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Type :
Standard
Mounting Type :
Through Hole
Number of Elements :
1
Packaging :
Tube
Current - Collector Pulsed (Icm) :
160A
Operating Temperature :
-55°C~150°C TJ
Fall Time-Max (tf) :
100ns
Length :
15.87mm
Pbfree Code :
yes
Gate Charge :
120nC
Power - Max :
290W
Max Power Dissipation :
290W
Collector Emitter Breakdown Voltage :
600V
Factory Lead Time :
5 Weeks
RoHS Status :
ROHS3 Compliant
Width :
4.82mm
Transistor Application :
POWER CONTROL
Weight :
6.39g
Number of Pins :
3
Turn Off Time-Nom (toff) :
201 ns
JEDEC-95 Code :
TO-247AB
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 40A
Datasheets
FGH80N60FD2TU
Introducing Transistors - IGBTs - Single onsemi FGH80N60FD2TU from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, FGH80N60FD2TU pinout, FGH80N60FD2TU datasheet PDF, FGH80N60FD2TU amp .Beyond Transistors - IGBTs - Single onsemi FGH80N60FD2TU ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH80N60FD2TU


FGH80N60FD2TU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

The ONSEMI FGH80N60FD2TU is a single IGBT transistor designed for use in high-power applications. This device features a 600V blocking voltage, 80A continuous current, and a maximum power dissipation of 290W. It is housed in a TO247 package, making it suitable for use in a wide variety of applications. The FGH80N60FD2TU is designed to provide superior performance and reliability in high-power applications, making it an ideal choice for industrial, automotive, and consumer electronics applications. It is also RoHS compliant, making it an environmentally friendly choice. With its high power handling capabilities and robust design, the ONSEMI FGH80N60FD2TU is an excellent choice for any high-power application.
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FGH80N60FDTU onsemi 1 IGBT 600V 80A 290W TO247
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