FGH80N60FD2TU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Factory Lead Time :

5 Weeks

Radiation Hardening :

No

Element Configuration :

Single

Gate-Emitter Voltage-Max :

20V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Pbfree Code :

yes

Turn On Time :

74 ns

Power - Max :

290W

Width :

4.82mm

IGBT Type :

Field Stop

Switching Energy :

1mJ (on), 520μJ (off)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-247AB

Collector Emitter Voltage (VCEO) :

600V

Input Type :

Standard

Number of Pins :

3

Packaging :

Tube

Weight :

6.39g

Case Connection :

COLLECTOR

Reverse Recovery Time :

61 ns

Test Condition :

400V, 40A, 10 Ω, 15V

Max Collector Current :

80A

Current - Collector Pulsed (Icm) :

160A

Fall Time-Max (tf) :

100ns

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 40A

Terminal Finish :

Tin (Sn)

HTS Code :

8541.29.00.95

Height :

20.82mm

Gate-Emitter Thr Voltage-Max :

7V

Collector Emitter Saturation Voltage :

600V

Collector Emitter Breakdown Voltage :

600V

ECCN Code :

EAR99

Td (on/off) @ 25°C :

21ns/126ns

Mount :

Through Hole

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

120nC

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Turn Off Time-Nom (toff) :

201 ns

Mounting Type :

Through Hole

Published :

2009

Length :

15.87mm

REACH SVHC :

No SVHC

Number of Terminations :

3

Transistor Application :

POWER CONTROL

Max Power Dissipation :

290W