FGH80N60FD2TU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Factory Lead Time :

5 Weeks

Polarity/Channel Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Length :

15.87mm

Transistor Element Material :

SILICON

Switching Energy :

1mJ (on), 520μJ (off)

Height :

20.82mm

Collector Emitter Voltage (VCEO) :

600V

Fall Time-Max (tf) :

100ns

IGBT Type :

Field Stop

Number of Elements :

1

Package / Case :

TO-247-3

Current - Collector Pulsed (Icm) :

160A

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Gate-Emitter Thr Voltage-Max :

7V

Input Type :

Standard

Max Collector Current :

80A

Reverse Recovery Time :

61 ns

JESD-609 Code :

e3

Weight :

6.39g

Gate-Emitter Voltage-Max :

20V

Published :

2009

Case Connection :

COLLECTOR

Mounting Type :

Through Hole

Gate Charge :

120nC

Radiation Hardening :

No

Td (on/off) @ 25°C :

21ns/126ns

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

600V

JEDEC-95 Code :

TO-247AB

Turn On Time :

74 ns

Power - Max :

290W

Number of Pins :

3

Turn Off Time-Nom (toff) :

201 ns

Number of Terminations :

3

Transistor Application :

POWER CONTROL

HTS Code :

8541.29.00.95

Element Configuration :

Single

Packaging :

Tube

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 40A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Width :

4.82mm

Max Power Dissipation :

290W

Collector Emitter Saturation Voltage :

600V

Test Condition :

400V, 40A, 10 Ω, 15V