FGH80N60FD2TU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Published :

2009

Case Connection :

COLLECTOR

Transistor Application :

POWER CONTROL

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

600V

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

7V

IGBT Type :

Field Stop

Test Condition :

400V, 40A, 10 Ω, 15V

Factory Lead Time :

5 Weeks

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Input Type :

Standard

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

JESD-609 Code :

e3

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 40A

Turn Off Time-Nom (toff) :

201 ns

Max Power Dissipation :

290W

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Gate Charge :

120nC

Package / Case :

TO-247-3

Number of Terminations :

3

Reverse Recovery Time :

61 ns

Width :

4.82mm

Fall Time-Max (tf) :

100ns

Length :

15.87mm

Number of Pins :

3

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-247AB

Mount :

Through Hole

Turn On Time :

74 ns

RoHS Status :

ROHS3 Compliant

Td (on/off) @ 25°C :

21ns/126ns

Collector Emitter Saturation Voltage :

600V

Switching Energy :

1mJ (on), 520μJ (off)

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Radiation Hardening :

No

Max Collector Current :

80A

HTS Code :

8541.29.00.95

Current - Collector Pulsed (Icm) :

160A

Gate-Emitter Voltage-Max :

20V

Weight :

6.39g

Height :

20.82mm

Element Configuration :

Single

Power - Max :

290W

Collector Emitter Breakdown Voltage :

600V