FGH80N60FD2TU

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Mfr.Part #
FGH80N60FD2TU
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 80A 290W TO247
Stock
9,101
In Stock :
9,101

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Published :
2009
IGBT Type :
Field Stop
Number of Terminations :
3
Case Connection :
COLLECTOR
Gate Charge :
120nC
Turn On Time :
74 ns
Operating Temperature :
-55°C~150°C TJ
Power - Max :
290W
Height :
20.82mm
ECCN Code :
EAR99
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 40A
Gate-Emitter Thr Voltage-Max :
7V
Collector Emitter Saturation Voltage :
600V
Gate-Emitter Voltage-Max :
20V
Element Configuration :
Single
Turn Off Time-Nom (toff) :
201 ns
Terminal Finish :
Tin (Sn)
Collector Emitter Breakdown Voltage :
600V
Packaging :
Tube
Width :
4.82mm
Max Power Dissipation :
290W
Transistor Application :
POWER CONTROL
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
600V
Package / Case :
TO-247-3
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
Number of Elements :
1
Switching Energy :
1mJ (on), 520μJ (off)
Mounting Type :
Through Hole
Factory Lead Time :
5 Weeks
Length :
15.87mm
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
JEDEC-95 Code :
TO-247AB
Reverse Recovery Time :
61 ns
Test Condition :
400V, 40A, 10 Ω, 15V
Radiation Hardening :
No
Max Collector Current :
80A
HTS Code :
8541.29.00.95
Input Type :
Standard
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Current - Collector Pulsed (Icm) :
160A
Weight :
6.39g
JESD-609 Code :
e3
Polarity/Channel Type :
N-Channel
Mount :
Through Hole
Td (on/off) @ 25°C :
21ns/126ns
Fall Time-Max (tf) :
100ns
Introducing Transistors - IGBTs - Single onsemi FGH80N60FD2TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-247-3, Mounting Type:Through Hole, FGH80N60FD2TU pinout, FGH80N60FD2TU datasheet PDF, FGH80N60FD2TU amp .Beyond Transistors - IGBTs - Single onsemi FGH80N60FD2TU ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH80N60FD2TU


FGH80N60FD2TU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

The ONSEMI FGH80N60FD2TU is a single IGBT transistor designed for use in high-power applications. This device features a 600V blocking voltage, 80A continuous current, and a maximum power dissipation of 290W. It is housed in a TO247 package, making it suitable for use in a wide variety of applications. The FGH80N60FD2TU is designed to provide superior performance and reliability in high-power applications, making it an ideal choice for industrial, automotive, and consumer electronics applications. It is also RoHS compliant, making it an environmentally friendly choice. With its high power handling capabilities and robust design, the ONSEMI FGH80N60FD2TU is an excellent choice for any high-power application.
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FGH80N60FDTU onsemi 1 IGBT 600V 80A 290W TO247
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