FGH80N60FD2TU

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Mfr.Part #
FGH80N60FD2TU
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 80A 290W TO247
Stock
9,101
In Stock :
9,101

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Max Power Dissipation :
290W
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Gate Charge :
120nC
Turn On Time :
74 ns
Case Connection :
COLLECTOR
Number of Pins :
3
Number of Elements :
1
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 40A
Mounting Type :
Through Hole
Input Type :
Standard
Height :
20.82mm
Mount :
Through Hole
Max Collector Current :
80A
IGBT Type :
Field Stop
Collector Emitter Voltage (VCEO) :
600V
JEDEC-95 Code :
TO-247AB
Switching Energy :
1mJ (on), 520μJ (off)
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Weight :
6.39g
Reverse Recovery Time :
61 ns
Operating Temperature :
-55°C~150°C TJ
Gate-Emitter Voltage-Max :
20V
Terminal Finish :
Tin (Sn)
Length :
15.87mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Td (on/off) @ 25°C :
21ns/126ns
Test Condition :
400V, 40A, 10 Ω, 15V
Factory Lead Time :
5 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
600V
Current - Collector Pulsed (Icm) :
160A
Gate-Emitter Thr Voltage-Max :
7V
Package / Case :
TO-247-3
Fall Time-Max (tf) :
100ns
Power - Max :
290W
JESD-609 Code :
e3
Published :
2009
Transistor Application :
POWER CONTROL
Collector Emitter Saturation Voltage :
600V
Turn Off Time-Nom (toff) :
201 ns
HTS Code :
8541.29.00.95
Packaging :
Tube
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Width :
4.82mm
Datasheets
FGH80N60FD2TU
Introducing Transistors - IGBTs - Single onsemi FGH80N60FD2TU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, FGH80N60FD2TU pinout, FGH80N60FD2TU datasheet PDF, FGH80N60FD2TU amp .Beyond Transistors - IGBTs - Single onsemi FGH80N60FD2TU ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH80N60FD2TU


FGH80N60FD2TU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

The ONSEMI FGH80N60FD2TU is a single IGBT transistor designed for use in high-power applications. This device features a 600V blocking voltage, 80A continuous current, and a maximum power dissipation of 290W. It is housed in a TO247 package, making it suitable for use in a wide variety of applications. The FGH80N60FD2TU is designed to provide superior performance and reliability in high-power applications, making it an ideal choice for industrial, automotive, and consumer electronics applications. It is also RoHS compliant, making it an environmentally friendly choice. With its high power handling capabilities and robust design, the ONSEMI FGH80N60FD2TU is an excellent choice for any high-power application.
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FGH80N60FDTU onsemi 1 IGBT 600V 80A 290W TO247
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