FGH80N60FD2TU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 40A

Polarity/Channel Type :

N-Channel

Gate Charge :

120nC

Element Configuration :

Single

Max Collector Current :

80A

Published :

2009

Number of Elements :

1

Input Type :

Standard

Package / Case :

TO-247-3

ECCN Code :

EAR99

Fall Time-Max (tf) :

100ns

Weight :

6.39g

JEDEC-95 Code :

TO-247AB

Packaging :

Tube

Mount :

Through Hole

Switching Energy :

1mJ (on), 520μJ (off)

Max Power Dissipation :

290W

Factory Lead Time :

5 Weeks

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

201 ns

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Height :

20.82mm

Width :

4.82mm

Test Condition :

400V, 40A, 10 Ω, 15V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Thr Voltage-Max :

7V

Turn On Time :

74 ns

Collector Emitter Saturation Voltage :

600V

Transistor Element Material :

SILICON

Power - Max :

290W

HTS Code :

8541.29.00.95

Reverse Recovery Time :

61 ns

Gate-Emitter Voltage-Max :

20V

Case Connection :

COLLECTOR

Length :

15.87mm

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

600V

Current - Collector Pulsed (Icm) :

160A

IGBT Type :

Field Stop

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Td (on/off) @ 25°C :

21ns/126ns

Transistor Application :

POWER CONTROL

Number of Pins :

3

Number of Terminations :

3