FGH80N60FD2TU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

600V

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Mount :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 40A

Test Condition :

400V, 40A, 10 Ω, 15V

Height :

20.82mm

HTS Code :

8541.29.00.95

Radiation Hardening :

No

IGBT Type :

Field Stop

RoHS Status :

ROHS3 Compliant

Turn Off Time-Nom (toff) :

201 ns

Fall Time-Max (tf) :

100ns

Transistor Application :

POWER CONTROL

Gate-Emitter Voltage-Max :

20V

Polarity/Channel Type :

N-Channel

Weight :

6.39g

Packaging :

Tube

Power - Max :

290W

Mounting Type :

Through Hole

Width :

4.82mm

REACH SVHC :

No SVHC

Switching Energy :

1mJ (on), 520μJ (off)

Published :

2009

Current - Collector Pulsed (Icm) :

160A

Number of Pins :

3

Pbfree Code :

yes

Package / Case :

TO-247-3

Number of Elements :

1

Input Type :

Standard

Max Collector Current :

80A

Turn On Time :

74 ns

Number of Terminations :

3

Gate-Emitter Thr Voltage-Max :

7V

Td (on/off) @ 25°C :

21ns/126ns

Factory Lead Time :

5 Weeks

Gate Charge :

120nC

Collector Emitter Breakdown Voltage :

600V

Case Connection :

COLLECTOR

Reverse Recovery Time :

61 ns

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-247AB

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

15.87mm

Max Power Dissipation :

290W

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

600V

ECCN Code :

EAR99