HGTG10N120BND

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

Tin (Sn)

Input Type :

Standard

Continuous Collector Current :

35A

Collector Emitter Saturation Voltage :

2.45V

Test Condition :

960V, 10A, 10 Ω, 15V

Lead Free :

Lead Free

Transistor Application :

Motor Control

Switching Energy :

850μJ (on), 800μJ (off)

Turn Off Time-Nom (toff) :

330 ns

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Pulsed (Icm) :

80A

Collector Emitter Voltage (VCEO) :

1.2kV

Number of Elements :

1

Width :

4.82mm

Turn-Off Delay Time :

165 ns

Gate Charge :

100nC

Rise Time :

165ns

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

IGBT Type :

NPT

Current Rating :

35A

Power Dissipation :

298W

JESD-609 Code :

e3

Element Configuration :

Single

Height :

20.82mm

Turn On Time :

32 ns

Max Power Dissipation :

298W

Reverse Recovery Time :

70 ns

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

1.2kV

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

ECCN Code :

EAR99

Package / Case :

TO-247-3

Published :

2011

Polarity/Channel Type :

N-Channel

Factory Lead Time :

7 Weeks

Max Collector Current :

35A

Mount :

Through Hole

HTS Code :

8541.29.00.95

Weight :

6.39g

Length :

15.87mm

Mounting Type :

Through Hole

Additional Feature :

LOW CONDUCTION LOSS

Number of Pins :

3

Pbfree Code :

yes

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 10A

Turn On Delay Time :

23 ns

Td (on/off) @ 25°C :

23ns/165ns

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Voltage - Collector Emitter Breakdown (Max) :

1200V

Voltage - Rated DC :

1.2kV