HGTG12N60A4D

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Max Collector Current :

54A

Turn On Time :

33 ns

Element Configuration :

Single

Test Condition :

390V, 12A, 10 Ω, 15V

Input Type :

Standard

Td (on/off) @ 25°C :

17ns/96ns

HTS Code :

8541.29.00.95

Gate Charge :

78nC

Turn-Off Delay Time :

96 ns

Radiation Hardening :

No

Weight :

6.39g

Base Part Number :

HGTG12N60

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Package / Case :

TO-247-3

Collector Emitter Breakdown Voltage :

600V

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Current - Collector Pulsed (Icm) :

96A

Number of Terminations :

3

Switching Energy :

55µJ (on), 50µJ (off)

Pbfree Code :

yes

Continuous Collector Current :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Mount :

Through Hole

Published :

2002

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

600V

Turn On Delay Time :

17 ns

Current Rating :

54A

Mounting Type :

Through Hole

Max Power Dissipation :

167W

REACH SVHC :

No SVHC

Number of Elements :

1

Contact Plating :

Tin

Turn Off Time-Nom (toff) :

180 ns

Rise Time :

16ns

Operating Temperature :

-55°C~150°C TJ

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Transistor Application :

POWER CONTROL

Collector Emitter Saturation Voltage :

2V

JESD-609 Code :

e3

Reverse Recovery Time :

30 ns

Lead Free :

Lead Free

Voltage - Rated DC :

600V

Power Dissipation :

167W

Packaging :

Tube

Factory Lead Time :

4 Weeks

Additional Feature :

LOW CONDUCTION LOSS

Height :

20.82mm

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Width :

4.82mm

Length :

15.87mm