HGTG12N60A4D

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Power Dissipation :

167W

Turn Off Time-Nom (toff) :

180 ns

Mounting Type :

Through Hole

Turn-Off Delay Time :

96 ns

Polarity/Channel Type :

N-Channel

Length :

15.87mm

Collector Emitter Saturation Voltage :

2V

Base Part Number :

HGTG12N60

Element Configuration :

Single

Voltage - Rated DC :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reverse Recovery Time :

30 ns

Test Condition :

390V, 12A, 10 Ω, 15V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Turn On Delay Time :

17 ns

Current Rating :

54A

Collector Emitter Breakdown Voltage :

600V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Gate Charge :

78nC

JESD-609 Code :

e3

Turn On Time :

33 ns

Additional Feature :

LOW CONDUCTION LOSS

Number of Pins :

3

Current - Collector Pulsed (Icm) :

96A

Switching Energy :

55µJ (on), 50µJ (off)

HTS Code :

8541.29.00.95

Case Connection :

COLLECTOR

Rise Time :

16ns

Width :

4.82mm

Number of Elements :

1

Transistor Element Material :

SILICON

Max Collector Current :

54A

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Collector Emitter Voltage (VCEO) :

600V

Input Type :

Standard

Transistor Application :

POWER CONTROL

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Td (on/off) @ 25°C :

17ns/96ns

Lead Free :

Lead Free

Package / Case :

TO-247-3

Continuous Collector Current :

60A

ECCN Code :

EAR99

Height :

20.82mm

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Number of Terminations :

3

Packaging :

Tube

Published :

2002

REACH SVHC :

No SVHC

Weight :

6.39g

Max Power Dissipation :

167W