HGTG12N60A4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Current Rating :

54A

Switching Energy :

55µJ (on), 50µJ (off)

Weight :

6.39g

Rise Time :

8ns

Collector Emitter Voltage (VCEO) :

600V

Lead Free :

Lead Free

Base Part Number :

HGTG12N60

Test Condition :

390V, 12A, 10 Ω, 15V

RoHS Status :

RoHS Compliant

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Input Type :

Standard

Power Dissipation :

167W

Voltage - Rated DC :

600V

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Saturation Voltage :

2.1V

Td (on/off) @ 25°C :

17ns/96ns

Gate Charge :

78nC

Mount :

Through Hole

Element Configuration :

Single

Number of Pins :

3

Max Power Dissipation :

167W

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Current - Collector Pulsed (Icm) :

96A

Radiation Hardening :

No

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Termination :

Through Hole

REACH SVHC :

No SVHC

Max Collector Current :

54A