HGTG12N60C3D

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

48nC

Length :

15.87mm

Max Power Dissipation :

104W

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 15A

Additional Feature :

LOW CONDUCTION LOSS

Max Collector Current :

24A

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

600V

Weight :

6.39g

Published :

1997

Voltage - Rated DC :

600V

Packaging :

Tube

Factory Lead Time :

36 Weeks

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Pbfree Code :

yes

Switching Energy :

380μJ (on), 900μJ (off)

Input Type :

Standard

Collector Emitter Breakdown Voltage :

600V

Turn On Time :

30 ns

REACH SVHC :

No SVHC

Power Dissipation :

104W

ECCN Code :

EAR99

Base Part Number :

HGTG12N60

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

1.65V

Current - Collector Pulsed (Icm) :

96A

JESD-609 Code :

e3

Width :

4.82mm

Reverse Recovery Time :

42 ns

Height :

20.82mm

Radiation Hardening :

No

Number of Pins :

3

Element Configuration :

Single

Current Rating :

24A

Number of Terminations :

3

Turn Off Time-Nom (toff) :

480 ns

Package / Case :

TO-247-3

Mount :

Through Hole

Transistor Application :

POWER CONTROL

Lead Free :

Lead Free

HTS Code :

8541.29.00.95

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Mounting Type :

Through Hole