IKD15N60RATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Turn Off Time-Nom (toff) :

430 ns

Qualification Status :

Not Qualified

Transistor Application :

POWER CONTROL

ECCN Code :

EAR99

Lead Free :

Contains Lead

Reverse Recovery Time :

110 ns

Td (on/off) @ 25°C :

16ns/183ns

Max Breakdown Voltage :

600V

Number of Pins :

3

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Max Collector Current :

30A

Published :

2013

Pbfree Code :

No

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 15A

Collector Emitter Breakdown Voltage :

600V

Gate Charge :

90nC

Gate-Emitter Thr Voltage-Max :

5.7V

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Series :

TRENCHSTOP™

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Input Type :

Standard

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

16 Weeks

Collector Emitter Voltage (VCEO) :

2.1V

Current - Collector Pulsed (Icm) :

45A

Reach Compliance Code :

not_compliant

Gate-Emitter Voltage-Max :

20V

Power - Max :

250W

Switching Energy :

370μJ (on), 530μJ (off)

Operating Temperature :

-40°C~175°C TJ

Test Condition :

400V, 15A, 15 Ω, 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

IGBT Type :

Trench Field Stop

JESD-609 Code :

e3

Number of Elements :

1

Turn On Time :

26 ns

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

250W

Terminal Form :

Gull wing

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED