IGW30N60TPXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Current - Collector Pulsed (Icm) :

90A

Input Type :

Standard

Published :

2006

Max Power Dissipation :

200W

Polarity/Channel Type :

N-Channel

Test Condition :

400V, 30A, 10.5 Ω, 15V

Moisture Sensitivity Level (MSL) :

Not Applicable

Configuration :

Single

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

1.8V

Switching Energy :

710μJ (on), 420μJ (off)

Packaging :

Tube

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Operating Temperature :

-40°C~175°C TJ

Max Collector Current :

53A

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 30A

JESD-30 Code :

R-PSFM-T3

IGBT Type :

Trench Field Stop

Factory Lead Time :

16 Weeks

Collector Emitter Breakdown Voltage :

600V

Turn On Time :

38 ns

Gate Charge :

130nC

Td (on/off) @ 25°C :

15ns/179ns

JESD-609 Code :

e3

Number of Terminations :

3

Transistor Application :

POWER CONTROL

Mounting Type :

Through Hole

Power - Max :

200W

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Turn Off Time-Nom (toff) :

279 ns

Series :

TRENCHSTOP™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Elements :

1