IGW30N60H3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Pbfree Code :

yes

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

IGBT Type :

Trench Field Stop

Td (on/off) @ 25°C :

21ns/207ns

Number of Elements :

1

Transistor Application :

POWER CONTROL

Package / Case :

TO-247-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Type :

Standard

Operating Temperature :

-40°C~175°C TJ

Turn On Time :

50 ns

Current - Collector (Ic) (Max) :

60A

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Test Condition :

400V, 30A, 10.5 Ω, 15V

Published :

2014

Pin Count :

3

Surface Mount :

No

Packaging :

Tube

Gate Charge :

165nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Switching Energy :

1.38mJ

Mounting Type :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

600V

Factory Lead Time :

17 Weeks

ECCN Code :

EAR99

Series :

TrenchStop®

Current - Collector Pulsed (Icm) :

120A

Base Part Number :

*GW30N60

Number of Terminations :

3

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Turn Off Time-Nom (toff) :

262 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

187W

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 30A