IGW25N120H3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Number of Terminations :

3

Voltage - Collector Emitter Breakdown (Max) :

1200V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Td (on/off) @ 25°C :

27ns/277ns

Current - Collector Pulsed (Icm) :

100A

Series :

TrenchStop®

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Current - Collector (Ic) (Max) :

50A

Surface Mount :

No

Transistor Element Material :

SILICON

Number of Elements :

1

Gate Charge :

115nC

Pin Count :

3

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 25A

Operating Temperature :

-40°C~175°C TJ

Package / Case :

TO-247-3

Switching Energy :

2.65mJ

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

326W

IGBT Type :

Trench Field Stop

Turn On Time :

61 ns

Configuration :

Single

Qualification Status :

Not Qualified

Input Type :

Standard

Test Condition :

600V, 25A, 23 Ω, 15V

Published :

2008

JESD-609 Code :

e3

Factory Lead Time :

16 Weeks

Packaging :

Tube

Turn Off Time-Nom (toff) :

397 ns