IGW25N120H3FKSA1

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Mfr.Part #
IGW25N120H3FKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 1200V 50A 326W TO247-3
Stock
2,494
In Stock :
2,494

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Input Type :
Standard
Configuration :
Single
Terminal Finish :
Tin (Sn)
Surface Mount :
No
Qualification Status :
Not Qualified
Series :
TrenchStop®
Td (on/off) @ 25°C :
27ns/277ns
Number of Terminations :
3
JESD-30 Code :
R-PSFM-T3
Number of Elements :
1
Turn Off Time-Nom (toff) :
397 ns
Operating Temperature :
-40°C~175°C TJ
Current - Collector Pulsed (Icm) :
100A
Pbfree Code :
yes
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 25A
Factory Lead Time :
16 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Switching Energy :
2.65mJ
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge :
115nC
Power - Max :
326W
ECCN Code :
EAR99
Current - Collector (Ic) (Max) :
50A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
IGBT Type :
Trench Field Stop
Transistor Application :
POWER CONTROL
Package / Case :
TO-247-3
Pin Count :
3
Packaging :
Tube
Test Condition :
600V, 25A, 23 Ω, 15V
Published :
2008
Terminal Position :
Single
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Turn On Time :
61 ns
Voltage - Collector Emitter Breakdown (Max) :
1200V
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Introducing Transistors - IGBTs - Single Infineon Technologies IGW25N120H3FKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-40°C~175°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, IGW25N120H3FKSA1 pinout, IGW25N120H3FKSA1 datasheet PDF, IGW25N120H3FKSA1 amp .Beyond Transistors - IGBTs - Single Infineon Technologies IGW25N120H3FKSA1 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IGW25N120H3FKSA1


IGW25N120H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IGW25N120H3FKSA1 Description


IGW25N120H3FKSA1 is a high-speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120. The Infineon IGW25N120H3FKSA1 can be applied in solar inverters, uninterruptible power supplies, welding converters, and converters with high switching frequency. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IGW25N120H3FKSA1 is in the PG-TO247-3 package with 326W power dissipation.



IGW25N120H3FKSA1 Features


TRENCHSTOPTM technology offering

best in class switching performance: less than 500μJ total switching losses achievable

very low VCEsat

low EMI

maximum junction temperature 175°C

qualified according to JEDEC for target applications

Pb-free lead plating; RoHS compliant



IGW25N120H3FKSA1 Applications


solar inverters

uninterruptible power supplies

welding converters

converters with the high switching frequency


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