FGH60N60UFDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Turn On Time :

83 ns

Collector Emitter Saturation Voltage :

600V

Transistor Application :

POWER CONTROL

HTS Code :

8541.29.00.95

Turn On Delay Time :

23 ns

Current - Collector Pulsed (Icm) :

180A

Mount :

Through Hole

Packaging :

Tube

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

600V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

ECCN Code :

EAR99

Length :

15.6mm

Gate-Emitter Voltage-Max :

20V

Height :

20.6mm

Published :

2015

Weight :

6.39g

Package / Case :

TO-247-3

Current - Collector (Ic) (Max) :

120A

Reverse Recovery Time :

47ns

Case Connection :

COLLECTOR

Td (on/off) @ 25°C :

23ns/130ns

Turn Off Time-Nom (toff) :

204 ns

Factory Lead Time :

5 Weeks

Collector Emitter Voltage (VCEO) :

600V

Base Part Number :

FGH60N60

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 60A

Gate-Emitter Thr Voltage-Max :

6.5V

IGBT Type :

Field Stop

JEDEC-95 Code :

TO-247AB

Pbfree Code :

yes

Input Type :

Standard

Fall Time-Max (tf) :

80ns

Radiation Hardening :

No

Gate Charge :

188nC

Test Condition :

400V, 60A, 5 Ω, 15V

Element Configuration :

Single

Switching Energy :

1.81mJ (on), 810μJ (off)

Width :

4.7mm

Turn-Off Delay Time :

130 ns

Max Collector Current :

60A

Number of Pins :

3

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Max Power Dissipation :

298W

Number of Elements :

1

Number of Terminations :

3