FGH60N60UFDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Height :

20.6mm

Max Power Dissipation :

298W

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

600V

Factory Lead Time :

5 Weeks

Length :

15.6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Element Configuration :

Single

Case Connection :

COLLECTOR

Packaging :

Tube

Test Condition :

400V, 60A, 5 Ω, 15V

Gate-Emitter Voltage-Max :

20V

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

23ns/130ns

Switching Energy :

1.81mJ (on), 810μJ (off)

Turn On Delay Time :

23 ns

Turn Off Time-Nom (toff) :

204 ns

Radiation Hardening :

No

Width :

4.7mm

Number of Terminations :

3

Lead Free :

Lead Free

Gate-Emitter Thr Voltage-Max :

6.5V

Transistor Application :

POWER CONTROL

Turn-Off Delay Time :

130 ns

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

600V

Number of Elements :

1

Gate Charge :

188nC

Number of Pins :

3

HTS Code :

8541.29.00.95

Current - Collector (Ic) (Max) :

120A

Fall Time-Max (tf) :

80ns

Base Part Number :

FGH60N60

Mounting Type :

Through Hole

Package / Case :

TO-247-3

Published :

2015

Mount :

Through Hole

Reverse Recovery Time :

47ns

JEDEC-95 Code :

TO-247AB

Polarity/Channel Type :

N-Channel

Weight :

6.39g

Max Collector Current :

60A

IGBT Type :

Field Stop

Collector Emitter Saturation Voltage :

600V

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

180A

REACH SVHC :

No SVHC

Pbfree Code :

yes

Turn On Time :

83 ns

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 60A