FGH60T65SHD-F155

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Mfr.Part #
FGH60T65SHD-F155
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT TRENCH/FS 650V 120A TO247
Stock
14,313
In Stock :
14,313

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Published :
2015
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 60A
Collector Emitter Voltage (VCEO) :
2.1V
Reach Compliance Code :
not_compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power - Max :
349W
Switching Energy :
1.69mJ (on), 630μJ (off)
Reverse Recovery Time :
34.6 ns
Weight :
6.39g
Max Power Dissipation :
349W
Pbfree Code :
yes
Mounting Type :
Through Hole
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Gate Charge :
102nC
Current - Collector Pulsed (Icm) :
180A
Test Condition :
400V, 60A, 6 Ω, 15V
Terminal Finish :
Tin (Sn)
Td (on/off) @ 25°C :
26ns/87ns
Mount :
Through Hole
Collector Emitter Breakdown Voltage :
650V
Input Type :
Standard
Operating Temperature :
-55°C~175°C TJ
IGBT Type :
Trench Field Stop
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
10 Weeks
Package / Case :
TO-247-3
JESD-609 Code :
e3
Max Collector Current :
120A
Lifecycle Status :
ACTIVE (Last Updated: 5 days ago)
Datasheets
FGH60T65SHD-F155
Introducing Transistors - IGBTs - Single onsemi FGH60T65SHD-F155 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-247-3, FGH60T65SHD-F155 pinout, FGH60T65SHD-F155 datasheet PDF, FGH60T65SHD-F155 amp .Beyond Transistors - IGBTs - Single onsemi FGH60T65SHD-F155 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH60T65SHD-F155


FGH60T65SHD-F155 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGH60T65SHD-F155 Description

 

FGH60T65SHD-F155 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGH60T65SHD-F155 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FGH60T65SHD-F155 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FGH60T65SHD-F155 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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