FGH60N60UFDTU-F085

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Mfr.Part #
FGH60N60UFDTU-F085
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 600V 120A 298W TO247
Stock
21,342
In Stock :
21,342

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Gate Charge :
192nC
Td (on/off) @ 25°C :
29ns/138ns
Max Power Dissipation :
298W
Mount :
Through Hole
Series :
Automotive, AEC-Q101
Power - Max :
298W
Input Type :
Standard
JESD-609 Code :
e3
Collector Emitter Breakdown Voltage :
600V
Current - Collector Pulsed (Icm) :
180A
Reach Compliance Code :
not_compliant
Mounting Type :
Through Hole
Max Collector Current :
120A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
3
Test Condition :
400V, 60A, 5 Ω, 15V
IGBT Type :
Field Stop
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Vce(on) (Max) @ Vge, Ic :
2.9V @ 15V, 60A
Collector Emitter Voltage (VCEO) :
2.9V
Factory Lead Time :
4 Weeks
Packaging :
Tube
Switching Energy :
2.47mJ (on), 810μJ (off)
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Reverse Recovery Time :
76 ns
Published :
2016
Terminal Finish :
Tin (Sn)
Operating Temperature :
-55°C~150°C TJ
Weight :
6.39g
Package / Case :
TO-247-3
Introducing Transistors - IGBTs - Single onsemi FGH60N60UFDTU-F085 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, FGH60N60UFDTU-F085 pinout, FGH60N60UFDTU-F085 datasheet PDF, FGH60N60UFDTU-F085 amp .Beyond Transistors - IGBTs - Single onsemi FGH60N60UFDTU-F085 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FGH60N60UFDTU-F085


FGH60N60UFDTU-F085 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGH60N60UFDTU-F085 Description

 

FGH60N60UFDTU-F085 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGH60N60UFDTU-F085 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FGH60N60UFDTU-F085 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FGH60N60UFDTU-F085 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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