FGH60N60SFDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Mount :

Through Hole

Pbfree Code :

yes

ECCN Code :

EAR99

Number of Terminations :

3

IGBT Type :

Field Stop

Td (on/off) @ 25°C :

22ns/134ns

Max Power Dissipation :

378W

Height :

20.6mm

Collector Emitter Breakdown Voltage :

600V

Terminal Finish :

Tin (Sn)

Fall Time-Max (tf) :

62ns

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Number of Elements :

1

Max Collector Current :

120A

Mounting Type :

Through Hole

Gate-Emitter Voltage-Max :

20V

Width :

4.7mm

Current - Collector Pulsed (Icm) :

180A

Packaging :

Tube

Length :

15.6mm

Gate-Emitter Thr Voltage-Max :

6.5V

Base Part Number :

FGH60N60

JESD-609 Code :

e3

Published :

2017

Operating Temperature :

-55°C~150°C TJ

Test Condition :

400V, 60A, 5 Ω, 15V

Weight :

6.39g

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-247AB

Factory Lead Time :

5 Weeks

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

Power - Max :

378W

Package / Case :

TO-247-3

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Input Type :

Standard

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

600V

Turn On Time :

66 ns

Number of Pins :

3

Radiation Hardening :

No

Additional Feature :

LOW CONDUCTION LOSS

Transistor Application :

POWER CONTROL

Switching Energy :

1.79mJ (on), 670μJ (off)

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Nom (toff) :

187 ns

Gate Charge :

198nC

HTS Code :

8541.29.00.95

Reverse Recovery Time :

47 ns