IKD10N60RATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

2.1V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 10A

Gate Charge :

64nC

Current - Collector Pulsed (Icm) :

30A

Terminal Form :

Gull wing

Factory Lead Time :

16 Weeks

Max Collector Current :

20A

Reverse Recovery Time :

62 ns

Element Configuration :

Single

Number of Pins :

3

Max Breakdown Voltage :

600V

Max Power Dissipation :

150W

Td (on/off) @ 25°C :

14ns/192ns

Gate-Emitter Thr Voltage-Max :

5.7V

Operating Temperature :

-40°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Transistor Application :

POWER CONTROL

ECCN Code :

EAR99

Pbfree Code :

No

Power - Max :

150W

Packaging :

Tape and Reel (TR)

Turn On Time :

24 ns

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

600V

Input Type :

Standard

Series :

TRENCHSTOP™

Pin Count :

3

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

N-Channel

Halogen Free :

Halogen Free

Mount :

Surface Mount

IGBT Type :

Trench Field Stop

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Turn Off Time-Nom (toff) :

428 ns

Case Connection :

COLLECTOR

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Switching Energy :

210μJ (on), 380μJ (off)

Gate-Emitter Voltage-Max :

20V

Test Condition :

400V, 10A, 23 Ω, 15V