HGTG11N120CND

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

23ns/180ns

Factory Lead Time :

5 Weeks

Mounting Type :

Through Hole

Test Condition :

960V, 11A, 10 Ω, 15V

Switching Energy :

950μJ (on), 1.3mJ (off)

Pbfree Code :

yes

Current - Collector Pulsed (Icm) :

80A

Gate Charge :

100nC

Turn On Time :

33 ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

Input Type :

Standard

Number of Terminations :

3

ECCN Code :

EAR99

Element Configuration :

Single

Transistor Application :

Motor Control

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

1.2kV

Transistor Element Material :

SILICON

Weight :

6.39g

Package / Case :

TO-247-3

IGBT Type :

NPT

Reverse Recovery Time :

70 ns

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Number of Elements :

1

Voltage - Rated DC :

1.2kV

Max Power Dissipation :

298W

Current Rating :

43A

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Max Collector Current :

43A

HTS Code :

8541.29.00.95

Lead Free :

Lead Free

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 11A

Power Dissipation :

298W

Published :

2016

Collector Emitter Breakdown Voltage :

1.2kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

180 ns

Packaging :

Tube

Turn On Delay Time :

23 ns

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

2.1V

Polarity :

NPN

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Mount :

Through Hole

Turn Off Time-Nom (toff) :

570 ns

RoHS Status :

ROHS3 Compliant

Additional Feature :

LOW CONDUCTION LOSS