HGTG11N120CND

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Gate Charge :

100nC

Published :

2016

Max Power Dissipation :

298W

Switching Energy :

950μJ (on), 1.3mJ (off)

Collector Emitter Saturation Voltage :

2.1V

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 11A

Max Collector Current :

43A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Collector Emitter Voltage (VCEO) :

1.2kV

Voltage - Rated DC :

1.2kV

IGBT Type :

NPT

Number of Elements :

1

Turn-Off Delay Time :

180 ns

Packaging :

Tube

Reverse Recovery Time :

70 ns

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

80A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

298W

HTS Code :

8541.29.00.95

Pbfree Code :

yes

Turn Off Time-Nom (toff) :

570 ns

Factory Lead Time :

5 Weeks

Element Configuration :

Single

Turn On Time :

33 ns

Collector Emitter Breakdown Voltage :

1.2kV

REACH SVHC :

No SVHC

Mount :

Through Hole

Transistor Element Material :

SILICON

Weight :

6.39g

Transistor Application :

Motor Control

Additional Feature :

LOW CONDUCTION LOSS

Polarity :

NPN

Turn On Delay Time :

23 ns

Number of Pins :

3

Package / Case :

TO-247-3

Current Rating :

43A

Radiation Hardening :

No

JESD-609 Code :

e3

Td (on/off) @ 25°C :

23ns/180ns

Test Condition :

960V, 11A, 10 Ω, 15V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)