FGH60N60UFDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Width :

4.7mm

Current - Collector (Ic) (Max) :

120A

Turn Off Time-Nom (toff) :

204 ns

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

23ns/130ns

Package / Case :

TO-247-3

Number of Pins :

3

Case Connection :

COLLECTOR

Transistor Application :

POWER CONTROL

Radiation Hardening :

No

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 60A

Max Power Dissipation :

298W

Weight :

6.39g

REACH SVHC :

No SVHC

Fall Time-Max (tf) :

80ns

Mount :

Through Hole

Transistor Element Material :

SILICON

Input Type :

Standard

Packaging :

Tube

Pbfree Code :

yes

Gate-Emitter Voltage-Max :

20V

Gate-Emitter Thr Voltage-Max :

6.5V

Published :

2015

Current - Collector Pulsed (Icm) :

180A

Length :

15.6mm

Gate Charge :

188nC

Lead Free :

Lead Free

IGBT Type :

Field Stop

Number of Terminations :

3

Reverse Recovery Time :

47ns

Collector Emitter Voltage (VCEO) :

600V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

130 ns

Switching Energy :

1.81mJ (on), 810μJ (off)

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Max Collector Current :

60A

Turn On Time :

83 ns

HTS Code :

8541.29.00.95

Mounting Type :

Through Hole

Base Part Number :

FGH60N60

Test Condition :

400V, 60A, 5 Ω, 15V

JEDEC-95 Code :

TO-247AB

Factory Lead Time :

5 Weeks

Polarity/Channel Type :

N-Channel

Element Configuration :

Single

Turn On Delay Time :

23 ns

Height :

20.6mm

Collector Emitter Saturation Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)