FGH60N60SMD-F085

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Number of Terminations :

3

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Reverse Recovery Time :

42ns

Polarity/Channel Type :

N-Channel

Turn Off Time-Nom (toff) :

139 ns

Gate-Emitter Thr Voltage-Max :

6V

Current - Collector (Ic) (Max) :

120A

IGBT Type :

Field Stop

Number of Elements :

1

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Series :

Automotive, AEC-Q101

RoHS Status :

ROHS3 Compliant

Current - Collector Pulsed (Icm) :

180A

Td (on/off) @ 25°C :

22ns/116ns

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Rise Time-Max :

60ns

Factory Lead Time :

5 Weeks

Turn On Time :

66 ns

Transistor Element Material :

SILICON

Test Condition :

400V, 60A, 3 Ω, 15V

Gate Charge :

280nC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max (Abs) :

600W

Switching Energy :

1.59mJ (on), 390μJ (off)

Published :

2013

Voltage - Collector Emitter Breakdown (Max) :

600V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 60A

Mounting Type :

Through Hole

Input Type :

Standard

Operating Temperature :

-55°C~175°C TJ

Fall Time-Max (tf) :

20ns

Power - Max :

600W

Gate-Emitter Voltage-Max :

20V

Pbfree Code :

yes

JEDEC-95 Code :

TO-247AB

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

Transistor Application :

POWER CONTROL