FGH60N60SFDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Additional Feature :

LOW CONDUCTION LOSS

Td (on/off) @ 25°C :

22ns/134ns

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Voltage-Max :

20V

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Height :

20.6mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Switching Energy :

1.79mJ (on), 670μJ (off)

Width :

4.7mm

Fall Time-Max (tf) :

62ns

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

180A

Length :

15.6mm

Turn Off Time-Nom (toff) :

187 ns

HTS Code :

8541.29.00.95

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Max Collector Current :

120A

Turn On Time :

66 ns

IGBT Type :

Field Stop

Packaging :

Tube

Reverse Recovery Time :

47 ns

Factory Lead Time :

5 Weeks

Max Power Dissipation :

378W

JESD-609 Code :

e3

Input Type :

Standard

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Mount :

Through Hole

Gate-Emitter Thr Voltage-Max :

6.5V

Collector Emitter Voltage (VCEO) :

600V

Weight :

6.39g

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

Test Condition :

400V, 60A, 5 Ω, 15V

Base Part Number :

FGH60N60

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Gate Charge :

198nC

JEDEC-95 Code :

TO-247AB

ECCN Code :

EAR99

Transistor Application :

POWER CONTROL

Mounting Type :

Through Hole

Number of Elements :

1

Power - Max :

378W

Case Connection :

COLLECTOR

Published :

2017