IKD15N60RF
- Mfr.Part #
- IKD15N60RF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IKD15N60 - DISCRETE IGBT WITH AN
- Stock
- 49,590
- In Stock :
- 49,590
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Gate-Emitter Voltage-Max :
- 20V
- Transistor Application :
- POWER CONTROL
- Terminal Form :
- Gull wing
- Turn Off Time-Nom (toff) :
- 193 ns
- Package :
- Bulk
- Surface Mount :
- yes
- IGBT Type :
- Trench Field Stop
- Gate Charge :
- 90 nC
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 30 A
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- N-Channel
- Supplier Device Package :
- PG-TO252-3-313
- Switching Energy :
- 270μJ (on), 250μJ (off)
- Number of Terminals :
- 2
- VCEsat-Max :
- 2.5 V
- JEDEC-95 Code :
- TO-252
- Pbfree Code :
- icon-pbfree no
- Case Connection :
- COLLECTOR
- Operating Temperature (Max) :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Terminal Finish :
- Tin (Sn)
- Input Type :
- Standard
- RoHS Status :
- RoHS Compliant
- Gate-Emitter Thr Voltage-Max :
- 5.7V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Voltage - Collector Emitter Breakdown (Max) :
- 600 V
- ECCN Code :
- EAR99
- Series :
- TRENCHSTOP™
- Reverse Recovery Time (trr) :
- 74 ns
- Power Dissipation-Max (Abs) :
- 250W
- Test Condition :
- 400V, 15A, 15Ohm, 15V
- Turn On Time :
- 30 ns
- Current - Collector Pulsed (Icm) :
- 45 A
- Power - Max :
- 250 W
- JESD-609 Code :
- e3
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature (Min) :
- -40°C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Product Status :
- Active
- Td (on/off) @ 25°C :
- 13ns/160ns
- Reach Compliance Code :
- Compliant
- Collector-Emitter Voltage-Max :
- 600V
- Collector Current-Max (IC) :
- 15A
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 15A
- Datasheets
- IKD15N60RF

IKD15N60RF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies AG stock available at
IKD15N60RF Description
The IKD15N60RF is an IGBT with integrated diode in packages offering space-saving advantages. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.
IKD15N60RF Features
-
Maximum junction temperature 175°C
-
Short circuit capability of 5μs
-
Best in class current versus package size performance
-
Qualified according to JEDEC for target applications
-
Pb-free lead plating; RoHS compliant (solder temperature 260°C, MSL1)
-
Optimized Eon, Eoff and Qrr for low switching losses
-
Operating range of 4 to 30kHz
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Smooth switching performance leading to low EMI levels
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Very tight parameter distribution
IKD15N60RF Applications
Domestic and industrial drives:
-
Compressors
-
Pumps
-
Fans
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