IKD15N60RF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

13ns/160ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Turn On Time :

30 ns

Operating Temperature (Min) :

-40°C

Surface Mount :

yes

Collector-Emitter Voltage-Max :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package :

Bulk

Supplier Device Package :

PG-TO252-3-313

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Collector Current-Max (IC) :

15A

Current - Collector Pulsed (Icm) :

45 A

Gate-Emitter Voltage-Max :

20V

Series :

TRENCHSTOP™

Case Connection :

COLLECTOR

Gate-Emitter Thr Voltage-Max :

5.7V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 15A

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Reach Compliance Code :

Compliant

Current - Collector (Ic) (Max) :

30 A

VCEsat-Max :

2.5 V

Test Condition :

400V, 15A, 15Ohm, 15V

Number of Terminals :

2

Number of Elements :

1

Input Type :

Standard

Product Status :

Active

ECCN Code :

EAR99

Voltage - Collector Emitter Breakdown (Max) :

600 V

Polarity/Channel Type :

N-Channel

IGBT Type :

Trench Field Stop

Power - Max :

250 W

Transistor Application :

POWER CONTROL

Operating Temperature (Max) :

175°C

Operating Temperature :

-40°C ~ 175°C (TJ)

Switching Energy :

270μJ (on), 250μJ (off)

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

250W

Turn Off Time-Nom (toff) :

193 ns

Pbfree Code :

icon-pbfree no

JEDEC-95 Code :

TO-252

Reverse Recovery Time (trr) :

74 ns

JESD-30 Code :

R-PSSO-G2

Gate Charge :

90 nC