IKD15N60RF

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Mfr.Part #
IKD15N60RF
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
IKD15N60 - DISCRETE IGBT WITH AN
Stock
49,590
In Stock :
49,590

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Mounting Type :
Surface Mount
RoHS Status :
RoHS Compliant
Transistor Element Material :
SILICON
Td (on/off) @ 25°C :
13ns/160ns
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
Turn On Time :
30 ns
Operating Temperature (Min) :
-40°C
Surface Mount :
yes
Collector-Emitter Voltage-Max :
600V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Bulk
Supplier Device Package :
PG-TO252-3-313
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Current-Max (IC) :
15A
Current - Collector Pulsed (Icm) :
45 A
Gate-Emitter Voltage-Max :
20V
Series :
TRENCHSTOP™
Case Connection :
COLLECTOR
Gate-Emitter Thr Voltage-Max :
5.7V
Vce(on) (Max) @ Vge, Ic :
2.5V @ 15V, 15A
Terminal Finish :
Tin (Sn)
Terminal Form :
Gull wing
Reach Compliance Code :
Compliant
Current - Collector (Ic) (Max) :
30 A
VCEsat-Max :
2.5 V
Test Condition :
400V, 15A, 15Ohm, 15V
Number of Terminals :
2
Number of Elements :
1
Input Type :
Standard
Product Status :
Active
ECCN Code :
EAR99
Voltage - Collector Emitter Breakdown (Max) :
600 V
Polarity/Channel Type :
N-Channel
IGBT Type :
Trench Field Stop
Power - Max :
250 W
Transistor Application :
POWER CONTROL
Operating Temperature (Max) :
175°C
Operating Temperature :
-40°C ~ 175°C (TJ)
Switching Energy :
270μJ (on), 250μJ (off)
JESD-609 Code :
e3
Power Dissipation-Max (Abs) :
250W
Turn Off Time-Nom (toff) :
193 ns
Pbfree Code :
icon-pbfree no
JEDEC-95 Code :
TO-252
Reverse Recovery Time (trr) :
74 ns
JESD-30 Code :
R-PSSO-G2
Gate Charge :
90 nC
Datasheets
IKD15N60RF
Introducing Transistors - IGBTs - Single Infineon Technologies IKD15N60RF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-40°C ~ 175°C (TJ), IKD15N60RF pinout, IKD15N60RF datasheet PDF, IKD15N60RF amp .Beyond Transistors - IGBTs - Single Infineon Technologies IKD15N60RF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IKD15N60RF


IKD15N60RF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies AG stock available at

IKD15N60RF Description


The IKD15N60RF is an IGBT with integrated diode in packages offering space-saving advantages. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The union between them is also implied by the name. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.



IKD15N60RF Features


  • Maximum junction temperature 175°C

  • Short circuit capability of 5μs

  • Best in class current versus package size performance

  • Qualified according to JEDEC for target applications

  • Pb-free lead plating; RoHS compliant (solder temperature 260°C, MSL1)

  • Optimized Eon, Eoff and Qrr for low switching losses

  • Operating range of 4 to 30kHz

  • Smooth switching performance leading to low EMI levels

  • Very tight parameter distribution



IKD15N60RF Applications


Domestic and industrial drives:

  • Compressors

  • Pumps

  • Fans


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