IKD10N60RATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Input Type :

Standard

Mount :

Surface Mount

Max Power Dissipation :

150W

Operating Temperature :

-40°C~175°C TJ

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Td (on/off) @ 25°C :

14ns/192ns

Collector Emitter Voltage (VCEO) :

2.1V

Published :

2013

Number of Pins :

3

Terminal Form :

Gull wing

Case Connection :

COLLECTOR

IGBT Type :

Trench Field Stop

Pin Count :

3

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Series :

TRENCHSTOP™

Reach Compliance Code :

not_compliant

Gate-Emitter Voltage-Max :

20V

Max Collector Current :

20A

Transistor Element Material :

SILICON

Pbfree Code :

No

Test Condition :

400V, 10A, 23 Ω, 15V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

ECCN Code :

EAR99

Max Breakdown Voltage :

600V

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 10A

Mounting Type :

Surface Mount

Current - Collector Pulsed (Icm) :

30A

Transistor Application :

POWER CONTROL

JESD-30 Code :

R-PSSO-G2

Collector Emitter Breakdown Voltage :

600V

Factory Lead Time :

16 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Switching Energy :

210μJ (on), 380μJ (off)

Power - Max :

150W

Gate Charge :

64nC

Lead Free :

Lead Free

Turn On Time :

24 ns

Gate-Emitter Thr Voltage-Max :

5.7V

Turn Off Time-Nom (toff) :

428 ns

Reverse Recovery Time :

62 ns