STGP10NC60K

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Collector Emitter Voltage (VCEO) :

600V

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Height :

9.15mm

JESD-609 Code :

e3

Packaging :

Tube

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

2V

Collector Emitter Breakdown Voltage :

600V

Package / Case :

TO-220-3

Max Collector Current :

20A

Mount :

Through Hole

Rise Time :

6ns

Voltage - Rated DC :

600V

Width :

4.6mm

Mounting Type :

Through Hole

Gate-Emitter Voltage-Max :

20V

Gate-Emitter Thr Voltage-Max :

7V

Current Rating :

20A

Turn Off Time-Nom (toff) :

242 ns

Input Type :

Standard

Power Dissipation :

25W

Number of Pins :

3

Test Condition :

390V, 5A, 10 Ω, 15V

Number of Terminations :

3

Current - Collector Pulsed (Icm) :

30A

Max Power Dissipation :

65W

Gate Charge :

19nC

Switching Energy :

55μJ (on), 85μJ (off)

Td (on/off) @ 25°C :

17ns/72ns

Turn On Time :

23 ns

Transistor Application :

POWER CONTROL

JEDEC-95 Code :

TO-220AB

Base Part Number :

STGP10

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Reverse Recovery Time :

22 ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Polarity/Channel Type :

N-Channel

Pin Count :

3

Length :

10.4mm

Number of Elements :

1

Case Connection :

Isolated

Series :

PowerMESH™

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 5A