STGP12NB60K

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Turn On Time :

39.5 ns

Gate-Emitter Thr Voltage-Max :

7V

Number of Terminations :

3

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

600V

Operating Temperature :

150°C TJ

Packaging :

Tube

Base Part Number :

STGP12

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

TO-220AB

Power Dissipation :

125W

Current - Collector Pulsed (Icm) :

60A

Collector Emitter Breakdown Voltage :

600V

JESD-609 Code :

e3

Test Condition :

480V, 12A, 10 Ω, 15V

Series :

PowerMESH™

Pin Count :

3

Current Rating :

18A

Max Collector Current :

30A

RoHS Status :

ROHS3 Compliant

Gate-Emitter Voltage-Max :

20V

Transistor Element Material :

SILICON

Input Type :

Standard

Max Power Dissipation :

125W

Turn Off Time-Nom (toff) :

370 ns

Mounting Type :

Through Hole

Mount :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

18A

Td (on/off) @ 25°C :

25ns/96ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

2.8V

JESD-30 Code :

R-PSFM-T3

Collector Emitter Voltage (VCEO) :

600V

Package / Case :

TO-220-3

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Element Configuration :

Single

Switching Energy :

258μJ (off)

Drain to Source Voltage (Vdss) :

600V

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 12A

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

Motor Control

Number of Elements :

1

Gate Charge :

54nC