STGP10NB60SD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

JESD-609 Code :

e3

Lead Free :

Lead Free

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

Contact Plating :

Tin

Power - Max :

80W

Length :

10.4mm

Number of Elements :

1

Turn On Delay Time :

700 ns

RoHS Status :

ROHS3 Compliant

Gate Charge :

33nC

Gate-Emitter Thr Voltage-Max :

5V

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

600V

Collector Emitter Breakdown Voltage :

600V

Turn On Time :

1160 ns

Series :

PowerMESH™

Vce(on) (Max) @ Vge, Ic :

1.75V @ 15V, 10A

Reverse Recovery Time :

37 ns

Input Type :

Standard

Height :

9.15mm

Weight :

6.000006g

Packaging :

Tube

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

29A

Turn-Off Delay Time :

1.2 μs

Factory Lead Time :

8 Weeks

Current Rating :

20A

Element Configuration :

Single

Mounting Type :

Through Hole

Power Dissipation :

3.5W

Td (on/off) @ 25°C :

700ns/1.2μs

Current - Collector Pulsed (Icm) :

80A

Transistor Application :

POWER CONTROL

Base Part Number :

STGP10

Gate-Emitter Voltage-Max :

20V

Width :

4.6mm

Collector Emitter Voltage (VCEO) :

600V

Rise Time :

460ns

Turn Off Time-Nom (toff) :

3100 ns

Drain to Source Breakdown Voltage :

600V

Max Power Dissipation :

80W

Number of Terminations :

3

Continuous Drain Current (ID) :

10A

Test Condition :

480V, 10A, 1k Ω, 15V

Transistor Element Material :

SILICON

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Radiation Hardening :

No

Package / Case :

TO-220-3

Switching Energy :

600μJ (on), 5mJ (off)